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  41.01 Datasheet PDF File

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text .... Typ. Max. Units --------109 0.41 14 56 1.5 --A V ns iC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=14A,VGS=0V TJ...01 .5 VGS = 10 V IDR , Reverse Drain Current 11 0 01 .0 VGS = 20 V 00 .5 @ N t : TJ =...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ... 5.0 15 10 40 10 20 15 40 29 50 41 90 22 50 39 60 4.0 -- 6.0 -- 300 -- 280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C V(BR)DSS/TJ Breakdo...01 20s PULSE WIDTH TJ = 25C 0.1 1 10 100 A 0.1 0.01 20s PULSE WIDTH TJ = 150C 0.1 1 10...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj = 25C, ...01 2.0 4.0 6.0 8.0 10.0 0.016 0 20 40 60 80 VGS, Gate -to -Source Voltage (V) I D , Drain C...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ... 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) N O TE S : A1 M CASBS L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3.0A, VGS =0VR Tj = 125C, Is = 3.0A, VGS =0VR ns Tj =...01 10 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 Notes: 1. Duty fact...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ... VDS = 16V, VGS = 0V, IS = 7.0A 41 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A Notes: * Repetitive rating;...01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. 60.00 (2.3 62) MIN . NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. ...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...-- --- --- --- --- --- 13 55 30 41 7.5 620 280 140 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0...01 0.1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maxim...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ...-- --- --- --- --- --- 13 55 30 41 4.5 7.5 620 280 140 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -...01 0.1 Thermal Response 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (s...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S161

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S16100C1-7TL IS42S16100C1-7TLI
OCR Text ...4 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 GND DQ15 IDQ14 GNDQ DQ13 DQ12 VDDQ DQ11 DQ10 GNDQ DQ9 DQ8 VD...01 F should be inserted between VDD and GND for each memory chip to suppress power supply voltage no...
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 750.59K  /  79 Page

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