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  36mh Datasheet PDF File

For 36mh Found Datasheets File :: 47    Search Time::0.938ms    
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    FMP13N60ES

Fuji Electric
Part No. FMP13N60ES
OCR Text ...5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t ch =25c - 0.90 1.08 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 476.33K  /  5 Page

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    FMC13N60E

Fuji Electric
Part No. FMC13N60E
OCR Text ...7 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t c h =25c - 0.90 1.08 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr...
Description N-CHANNEL SILICON POWER MOSFET

File Size 418.52K  /  5 Page

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    FMI13N60E

Fuji Electric
Part No. FMI13N60E
OCR Text ...7 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t c h =25c - 0.90 1.08 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr...
Description N-CHANNEL SILICON POWER MOSFET

File Size 419.42K  /  5 Page

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    FMP13N60E

Fuji Electric
Part No. FMP13N60E
OCR Text ...7 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t c h =25c - 0.90 1.35 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr...
Description N-CHANNEL SILICON POWER MOSFET

File Size 415.37K  /  5 Page

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    FMV13N60ES

Fuji Electric
Part No. FMV13N60ES
OCR Text ...5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t ch =25c - 0.90 1.08 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 475.40K  /  5 Page

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    FMV13N60E

Fuji Electric
Part No. FMV13N60E
OCR Text ...7 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t c h =25c - 0.90 1.08 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr...
Description N-CHANNEL SILICON POWER MOSFET

File Size 413.37K  /  5 Page

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    Toshiba
Part No. K10A60D
OCR Text ...CUIT RG = 25 VDD = 90 V, L = 6.36mh WAVEFORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2009-09-29 www.DataSheet4U.com TK10A60D RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affil...
Description Search --To TK10A60D

File Size 178.18K  /  6 Page

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    APT37M100B2 APT37M100B2-09

Microsemi, Corp.
Microsemi Corporation
Part No. APT37M100B2 APT37M100B2-09
OCR Text ... starting at t j = 25c, l = 13.36mh, r g = 2.2 , i as = 18a. 3 pulse test: pulse width < 380s, duty cycle < 2%. 4 c o(cr) is de? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . ...
Description N-Channel MOSFET 37 A, 1000 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 112.72K  /  4 Page

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    IRL3102

International Rectifier
Part No. IRL3102
OCR Text ... ? starting t j = 25c, l = 0.36mh r g = 25 w , i as = 35a. ? pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing...
Description 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 101.35K  /  7 Page

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    APT34F100B209

Microsemi Corporation
Part No. APT34F100B209
OCR Text ... starting at t j = 25c, l = 13.36mh, r g = 25 , i as = 18a. 3 pulse test: pulse width < 380s, duty cycle < 2%. 4 c o(cr) is de? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . ...
Description N-Channel FREDFET

File Size 98.10K  /  4 Page

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For 36mh Found Datasheets File :: 47    Search Time::0.938ms    
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