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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MMG3008NT1
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| OCR Text |
...
f GHz 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 S11 |S11| 0.03723 0.03824 0.0... |
| Description |
Heterojunction Bipolar Transistor(InGaP HBT)
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| File Size |
209.88K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MMG3007NT1
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| OCR Text |
...
f GHz 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 S11 |S11| 0... |
| Description |
Heterojunction Bipolar Transistor(InGaP HBT)
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| File Size |
204.20K /
12 Page |
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飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
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| Part No. |
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
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| OCR Text |
..., M2, M3, M4 Description 22 mF, 35 V Tantalum Chip Capacitors, AVX #TAJE226M035R 1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X 22 pF ...7 8 9 10 11
NC
NC
Temperature Compensation
NC
13 12
R2
VGS + C8
Freescale Se... |
| Description |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
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| File Size |
665.04K /
16 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW4IC915NBR1_06 MW4IC915GNBR1 MW4IC915GNBR1_06 MW4IC915NBR1
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| OCR Text |
...3, M4 R1, R2 Description 22 mF, 35 V Tantalum Chip Capacitors 1000 pF Chip Capacitors 22 pF Chip Capacitors 10 pF Chip Capacitors 10 mF Tant...7 8 9 10 NC 11 16 NC 15 RF OUTPUT C4 C5 C6
14
Z2
Z3
C15 C1
Z4
Z5
C2
Z6
C3... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
678.09K /
20 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| Part No. |
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D
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| OCR Text |
... -- -- Typ 15 30 56 -16 0.9 -30 35 Max -- -- -- -- -- -- -- Unit Watts dB % dB % dBc %
Freescale Semiconductor, Inc...
Drain Efficienc...7 8
Freescale Semiconductor, Inc...
Z10 VBIAS2 R2 C10 R4 C9 VGS2
Z1 Z2 Z3 Z4 Z5 Z6
0.043... |
| Description |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
648.85K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MHVIC915NR2
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| OCR Text |
...-- -- -- 15 30 56 - 16 0.9 - 30 35 -- -- -- -- -- -- -- W dB % dB % dBc %
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit ...7 C13 Z12 VGS1 8
C3 Z9
VBIAS1 R1 C11 R3 C12 Z10 VGS2 VBIAS2 R2 C10 R4 C9
Z1 Z2 Z3 Z4 Z5 Z6
... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
489.75K /
16 Page |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MHVIC2115R2
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| OCR Text |
...Q2 = 204 mA, IDQ3 = 111 mA -20 -35 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 f, FEQUENCY (MHz) TC = 85_C 25_C
f, FREQUENCY (...7. Power Gain versus Output Power
Figure 8. S21 Phase versus Output Power
MHVIC2115R2 4
For... |
| Description |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
575.72K /
8 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MHVIC2114R2
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| OCR Text |
...7 1.6 1.5 1.4 1.3 1.2 2100 -30 -35 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -30_C VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA,...7. Power Gain versus Output Power
Figure 8. S21 Phase versus Output Power
MOTOROLA RF DEVICE D... |
| Description |
2100 MHz, 27 V, 23 dBm Single W–CDMA RF LDMOS Wideband Integrated Power Amplifier
From old datasheet system
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| File Size |
644.48K /
8 Page |
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it Online |
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