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27a - Datasheet PDF File

For 27a - Found Datasheets File :: 1763 Search Time::0.813ms
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				SamHop Microelectronics
Part No.	SP8076EL
OCR Text	27a 4.5 @ vgs=6v 4.0 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor ver 1.4 www.samhop.com.tw sep,24,2014 1 details are subjec...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	104.52K / 8 Page	View it Online	Download Datasheet

				SamHop Microelectronics
Part No.	SP8076E
OCR Text	27a 4.9 @ vgs=6v 3.8 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor ver 1.3 www.samhop.com.tw oct,22,2013 1 details are ...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	110.16K / 8 Page	View it Online	Download Datasheet

				MICROSEMI POWER PRODUCTS GROUP
Part No.	APT6010B2LLG
OCR Text	... 2 (v gs = 10v, i d = 27a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 480v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold ...
Description	54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	160.55K / 5 Page	View it Online	Download Datasheet

				SamHop Microelectronics...
Part No.	SP8007
OCR Text	...dss i d r ds(on) (m ) max 24v 27a 3.9 @ vgs=4.0v 3.8 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-cont...
Description	Super high dense cell design for low RDS(ON). N-Channel Enhancement Mode Field Effect Transistor
File Size	112.50K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNB8260
OCR Text	...ce ? ? 0.070 v gs = 12v, i d =27a on-state resistance ? ? 0.077 ? v gs = 12v, i d = 43a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 9.0 ? ? s ( )v ds > 15v, i ds = 27a i ...
Description	200Volt,0.070惟, N-Channel MEGA RAD HARD HEXFET(200V,0.070惟,MEGA ???灏?娌??HEXFET?朵?绠?
File Size	109.44K / 8 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT6010LFLLG APT6010B2FLLG
OCR Text	... 2 (v gs = 10v, i d = 27a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 480v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold ...
Description	FREDFETs
File Size	170.52K / 5 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTP4060J3
OCR Text	... source bv dss -100v i d -27a r dson @v gs =-10v, i d =-20a 36m (typ.) r dson @v gs =-4.5v, i d =-18a 41m (typ.) g d s parameter symbol limits unit drain-source voltage v ds -100 v gs 20 v gate-source voltage ...
Description	P-Channel Logic Level Enhancement Mode Power MOSFET
File Size	274.66K / 8 Page	View it Online	Download Datasheet

For 27a - Found Datasheets File :: 1763 Search Time::0.813ms
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