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  18nc Datasheet PDF File

For 18nc Found Datasheets File :: 43    Search Time::1.109ms    
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    SPD30N03S2L-20 SPD30N03S2L-20G SPD30N03S2L-2008

Infineon Technologies AG
Part No. SPD30N03S2L-20 SPD30N03S2L-20G SPD30N03S2L-2008
OCR Text ...5 Tj 0 0 2 4 6 8 10 12 14 16 18nc 21 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD30N03S2L-20 V V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj ...
Description OptiMOS Power-Transistor Feature Enhancement mode Logic Level
30 A, 30 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

File Size 649.79K  /  9 Page

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    FDP10N50F FDPF10N50FT

Fairchild Semiconductor
Part No. FDP10N50F FDPF10N50FT
OCR Text ...= 4.5a ? low gate charge ( typ. 18nc) ? low c rss ( typ. 10pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transis- tors are produ...
Description N-Channel MOSFET 500V, 9A, 0.85Ω

File Size 404.88K  /  9 Page

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    http://
International Rectifier, Corp.
Part No. IRF7811W IRF7811WTR
OCR Text ...f7811w r ds (on) 9.0m w q g 18nc q sw 5.5nc q oss 12nc device characteristics ? top view 8 1 2 3 4 5 6 7 d d d d g s a s s so-8 hexfet ? power mosfet for dc-dc converters ? n-channel application-specific mosfets ? id...
Description 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET for DC-DC Converters 功率MOSFET用于DC - DC转换

File Size 146.13K  /  6 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFD830B
OCR Text ...? ultra-low gate charge(typical 18nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this po w er mosfet is produced using winsemi s advanced planar stripe, dmos technolog...
Description Silicon N-Channel MOSFET

File Size 430.39K  /  7 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFP830B
OCR Text ...? ultra-low gate charge(typical 18nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this po w er mosfet is produced using winsemi s advanced planar stripe, dmos technolog...
Description Silicon N-Channel MOSFET

File Size 478.59K  /  7 Page

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    IRF7805Z IRF7805ZTR

International Rectifier
Part No. IRF7805Z IRF7805ZTR
OCR Text ... (typ.) 30v 6.8m @v gs = 10v 18nc applications high frequency point-of-load synchronous buck converter for applications in networking & computing systems. absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gat...
Description 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 208.74K  /  10 Page

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    FDD8874 FDD8874NL

Fairchild Semiconductor
Part No. FDD8874 FDD8874NL
OCR Text ... = 35a, di sd /dt = 100a/ s- -18nc ?2004 fairchild semiconductor corporation fdd8874 / fdu8874 rev.b1 fdd8874 / fdu8874 typical characteristics t c = 25 c unless otherwise noted figure 1. normalized power dissipation vs case temper...
Description 30V N-Channel PowerTrench MOSFET

File Size 205.22K  /  11 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. QPF5N50CYDTU
OCR Text ...0 v  low gate charge ( typical 18nc)  low crss ( typical 15pf)  fast switching  100% avalanche tested  improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junct...
Description 500V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail

File Size 999.74K  /  12 Page

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    SCS212AGHR

Rohm
Part No. SCS212AGHR
OCR Text ...650v 12a v r i f q c ? features 18nc 1) shorter recovery time a w symbol ? construction silicon carbide epitaxial planer schottky diode parameter v v a a a v rm tube - type packaging reel size (mm) c scs212ag basic ordering unit (pcs) tape...
Description SiC Schottky Barrier Diode

File Size 527.34K  /  6 Page

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    IRF6612TRPBF IRF6612PBF IRF66121PBF IRF6612PBF-15 IRF661TRPBF

International Rectifier
Part No. IRF6612TRPBF IRF6612PBF IRF66121PBF IRF6612PBF-15 IRF661TRPBF
OCR Text ... gs(th) 30nc 10nc 2.9nc 8.1nc 18nc 1.8v sq sx st mq mx mt irf6612pbf 2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. notes: static @ t j = 25c (unless...
Description RoHs Compliant
Ideal for CPU Core DC-DC Converters

File Size 238.58K  /  10 Page

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