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  17m Datasheet PDF File

For 17m Found Datasheets File :: 244    Search Time::1.188ms    
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    FDS8878 FDS8878NL

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS8878 FDS8878NL
OCR Text ...VGS = 10V, ID = 10.2A rDS(ON) = 17m, VGS = 4.5V, ID = 9.3A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability General Description This N-Channel MOSFET has been design...
Description N-Channel PowerTrench MOSFET

File Size 569.71K  /  12 Page

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    ANPEC[Anpec Electronics Coropration]
ETC[ETC]
ANPEC Electronics Corporation
Part No. APM3020PUC-TU APM3020PUC-TR APM3020P APM3020PU
OCR Text 17m(typ.) @ VGS = -10V RDS(ON) = 24m(typ.) @ VGS = -5V Super High Density Cell Design Reliable and Rugged TO-252 Package Pin Description G D S Applications Top View of TO-252 * Power Management in Notebook Computer, Po...
Description CAP 22UF 16V 10% TANT SMD-6032-28 TR-13
P-Channel Enhancement Mode MOSFET

File Size 619.95K  /  9 Page

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    APM4542KC-TRL APM4542 APM4542KC-TR

ANPEC Electronics Corporation
Anpec Electronics Coropration
Part No. APM4542KC-TRL APM4542 APM4542KC-TR
OCR Text 17m(typ.) @ VGS=10V RDS(ON)=22m(typ.) @ VGS=4.5V Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 * P-Channel -30V/-5.5A,RDS(ON)=35m(typ.) @ VGS=-10V RDS(ON)=51m(typ.) @ VGS=-4.5V SO-8 * * * Super High Dense Cell D...
Description 30 V,( N-and P-channel )dual enhancement mode MOSFET
Dual Enhancement Mode MOSFET (N-and P-Channel)

File Size 267.34K  /  13 Page

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    FDS6993

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6993
OCR Text ...hannel -6.8A, -12V RDS(on) = 17m @ VGS = -4.5V RDS(on) = 24m @ VGS = -2.5V * RDS(on) = 30m @ VGS = -1.8V High power and handling capability in a widely used surface mount package D1 D D1 D DD2 D2 D 5 6 7 G2 S2 G Q2 4 3 2...
Description Dual P-Channel PowerTrench MOSFET

File Size 156.45K  /  8 Page

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    APW7065KE-TRL APW7065KE-TU APW7065KE-TUL APW7065 APW7065KE-TR

ANPEC[Anpec Electronics Coropration]
Part No. APW7065KE-TRL APW7065KE-TU APW7065KE-TUL APW7065 APW7065KE-TR
OCR Text ...L=1uH, L_side: APM2023, Rds(on)=17m[ CH1 CH1 Short Test VCC=12V, Vin=12V Vo=1.2V, L=1uH CH2 CH2 CH3 CH3 CH4 CH4 CH1: IL (10A/div) CH2: Vo (2V/div) CH3: Ug (20V/div) CH4: Lg (10V/div) Time: 2ms/div CH1: IL (10A/...
Description Synchronous Buck PWM Controller

File Size 761.88K  /  19 Page

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    SUMIDA[Sumida Corporation]
Part No. CDR10D48MN CDR7D43MN
OCR Text ...3.9m( 27.2m) 4.7 3.7 3.0 21.3m( 17m) 48.4m( 38.7m) 56.8m( 45.4m) 80.4m( 64.3m) 93.6m( 74.9m) 106.4m( 85.1m) 143.6m(114.9m) 160.0m(127.7m) 175.0m(140.0m) 247.0m(197.6m) 266.3m(213.0m) 363.8m(291.1m) 401.4m(321.1m) 455.8m(364.6m) 3.9 3.7 3.2 ...
Description POWER INDUCTORS

File Size 108.93K  /  2 Page

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    AON3402

Alpha & Omega Semiconductors
AOSMD
Part No. AON3402
OCR Text ...N) < 13m (VGS = 4.5V) RDS(ON) < 17m (VGS = 2.5V) RDS(ON) < 26m (VGS = 1.8V) ESD Rating: 2000V HBM D D D D D S S S G D D D D S G G S S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Sym...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 133.60K  /  4 Page

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    TP5299 TP5299PWB

List of Unclassifed Manufacturers
Tepro Technology
N.A.
Part No. TP5299 TP5299PWB
OCR Text ...6% 16.3K 9.0M 87.4ms 0.21% 0.6K 17m 46ms 0.14% 29.4K 5.5M 143ms 0.33% 13.7K 10M 79ms 0.19% External Resistor] Delay Time x Total Clock Frequency(Hz) Harmonic TABLE 1: RESISTOR/DELAY TIME VALUES Print Page 9 of 9 iae1/2s QW730101...
Description Echo Processor IC

File Size 71.36K  /  11 Page

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    AO8816L AO8816

Alpha & Omega Semicondu...
Alpha & Omega Semiconductors
Part No. AO8816L AO8816
OCR Text ...ON) < 15m (VGS = 10V) RDS(ON) < 17m (VGS = 4.5) RDS(ON) < 23m (VGS = 2.5V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter S...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 103.32K  /  4 Page

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    FS70SMJ-2 FS1UM-16A

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS70SMJ-2 FS1UM-16A
OCR Text .................................. 17m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ........... 115ns q q GATE w DRAIN e SOURCE r DRAIN e TO-3P ...
Description HIGH-SPEED SWITCHING USE

File Size 40.29K  /  4 Page

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