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  100ua-ir Datasheet PDF File

For 100ua-ir Found Datasheets File :: 417    Search Time::1.265ms    
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    HSDL-4260

Lite-On Technology Corporation
Part No. HSDL-4260
OCR Text ... 20% Pulse Width = 100us [1] IR=100uA Forward Current Power Dissipation Reverse Voltage Storage Temperature LED Junction Temperature Lead Soldering Temperature Notes: Derate as shown in Figure 6. IFDC PDISS VR TS TJ 4 -40 100 2...
Description High-Power T-1篓煤 (5mm) AlGaAs Infrared (875nm) Lamp
High-Power T-1? (5mm) AlGaAs Infrared (875nm) Lamp

File Size 128.91K  /  4 Page

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    WILLAS ELECTRONIC CORP
Part No. BAV20
OCR Text ...s unit breakdown voltage ir= 100ua bv 200 v peak forward surge current pw= 1sec. ifsurge 1.0 a maximum forward voltage if= 100ma vf 1.0 v maximum reverse current vr=1 50v vr=150v,tj= 10 0 c ir 0.10 15 ua maximum...
Description BAV20 SIGNAL DIODE

File Size 271.83K  /  2 Page

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    HSDL-4250 HSDL-4251

Lite-On Technology Corporation
Part No. HSDL-4250 HSDL-4251
OCR Text ... 20% Pulse Width = 100us [1] IR=100uA Forward Current Power Dissipation Reverse Voltage Storage Temperature LED Junction Temperature Lead Soldering Temperature Notes: 1. Derate as shown in Figure 6. IFDC PDISS VR TS TJ 5 -40 10...
Description High-Performance T-1 篓煤 (5mm) AlGaAs Infrared (870nm) Lamp
High-Performance T-1 ? (5mm) AlGaAs Infrared (870nm) Lamp

File Size 180.84K  /  4 Page

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    Taiwan Semiconductor
Part No. 1N4448W
OCR Text ...e breakdown voltage (note 3) ir=100ua v(br) 75 - v forward voltage if=1.0ma if= 10ma if = 50ma if=150ma vf 0.55 0.67 0...
Description  

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    LL4448

Formosa MS
Part No. LL4448
OCR Text ...e Rectification efficiency IR = 100uA , TP /T = 0.01 TP = 0.3ms VR = 0 , f = 1MHz , VHF = 50mV VHF = 2V , f = 100MHz IF = IR = 10mA , IRR = 1mA Reverse recovery time IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM CONDITIONS Symbol VF IR IR I...
Description Silicon epitaxial planar type

File Size 50.99K  /  2 Page

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    LL4448

GOOD-ARK[GOOD-ARK Electronics]
Part No. LL4448
OCR Text ...e breakdown voltage tested with 100uA pulses Capacitance at VF=VR=0 at Tj=25 Symbols Min. Typ. Max. Units VF VF IR IR IR V(BR)R Ctot trr RthA V 0.62 100 0.45 - 0.72 1 25 5 50 4 4 0.35 1) Volt Volt nA uA uA Volts F nS K/m...
Description SILICON EPITAXIAL PLANAR DIODE

File Size 212.41K  /  4 Page

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    1N4148

RECTRON[Rectron Semiconductor]
Part No. 1N4148
OCR Text ...Breakdown Voltage IR= 5.0uA IR= 100uA Peak Forward Surge Current PW= 1sec. Maximum Forward Voltage IF= 10mA Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj= 150C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time...
Description SIGNAL DIODE

File Size 10.53K  /  1 Page

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    TC1N414810 TC1N4448

Tak Cheong Electronics (Holdings) Co.,Ltd
Tak Cheong Electronics (Hol...
Part No. TC1N414810 TC1N4448
OCR Text ...verse current bv C 1.0ua to 100ua figure 4 . reverse current vs reverse voltage ir C 10v to 100v figure 5 . fo rward voltage vs forward current vf C 0.001ma to 800ma figure 6 . forward voltage vs ambient temperature v...
Description 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes

File Size 422.17K  /  4 Page

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    LL4148

FORMOSA[Formosa MS]
Part No. LL4148
OCR Text ...e Rectification efficiency IR = 100uA , TP /T = 0.01 TP = 0.3ms VR = 0 , f = 1MHz , VHF = 50mV VHF = 2V , f = 100MHz IF = IR = 10mA , IRR = 1mA Reverse recovery time IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM CONDITIONS Symbol VF VF IR I...
Description MINI-MELF Switching Diode - Silicon epitaxial planar type

File Size 66.65K  /  2 Page

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    Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HBAV99
OCR Text ...3) VF(4) IR CT Trr Condition IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=70 VR=0, f=1MHz IF=IR=10mA, RL=100 measured at IR=1mA Min 70 Max 715 855 1000 1250 2.5 1.5 6 Unit V mV mV mV mV uA pF nS HBAV99 HSMC Product Specification HI-...
Description HIGH-SPEED SWITCHING DIODE

File Size 22.94K  /  3 Page

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