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  100a 400v Datasheet PDF File

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    APT5014B2VR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5014B2VR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 1 0.5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GA...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm

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    APT5014LVR

ADPOW[Advanced Power Technology]
Part No. APT5014LVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 1 0.5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GA...
Description POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5015 APT5015BVR

ADPOW[Advanced Power Technology]
Part No. APT5015 APT5015BVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES...
Description POWER MOS V 500V 32A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5017BVFR

ADPOW[Advanced Power Technology]
Part No. APT5017BVFR
OCR Text ...Time (IS = -ID [Cont.], di/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100a/s) Peak Recovery Current (IS = -ID [Cont.], ...400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES...
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.45K  /  4 Page

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    APT5017BVR

ADPOW[Advanced Power Technology]
Part No. APT5017BVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES...
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.07K  /  4 Page

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    APT5017 APT5017SVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5017 APT5017SVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES...
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.55K  /  4 Page

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    APT5019HVR

ADPOW[Advanced Power Technology]
Part No. APT5019HVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 16 100 50 TJ =+150C TJ =+25C 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE ...
Description POWER MOS V 500V 24A 0.190 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.96K  /  4 Page

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    APT5020BN APT5022BN

ADPOW[Advanced Power Technology]
Part No. APT5020BN APT5022BN
OCR Text ...me (IS = -ID [Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100a/s) SAFE OPERATING AREA CHARACTERISTICS ...400v 8 4 2 1 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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    APT5020BVFR

ADPOW[Advanced Power Technology]
Part No. APT5020BVFR
OCR Text ...Time (IS = -ID [Cont.], di/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100a/s) Peak Recovery Current (IS = -ID [Cont.], ...400v 8 10 5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs ...
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.42K  /  4 Page

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    APT5020BVR

ADPOW[Advanced Power Technology]
Part No. APT5020BVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 10 5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs ...
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.88K  /  4 Page

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