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Taiwan Semiconductor Co...
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| Part No. |
TSC873
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| OCR Text |
...nt v cb =600v i cbo -- -- 100 ua collector-emitter cutoff current v ce = 400v i ceo -- -- 1 ma emitter-base cutoff current ...250ma v ce(sat) 2 -- -- 1 v base-emitter saturation voltage i c = 500ma, i b = 100ma v b... |
| Description |
NPN Silicon Planar High Voltage Transistor
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| File Size |
131.62K /
5 Page |
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DOMINANT[DOMINANT Semiconductors]
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| Part No. |
NMRTB-USS-1
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| OCR Text |
...verse bias drive 2 125 -40 ... +100 -40 ... +100
Unit
mA mA V kV C C C
3
08/02/2007 V1.0
DOMINANT TM
Semiconductors
Innovating Illumination
RGB SPNovaLED : 250
Forward Current Vs Forward Voltage (Red)
500
Forward Cu... |
| Description |
SPNovaLED
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| File Size |
510.11K /
13 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE218
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| OCR Text |
...eristics - hFE @ IC = 250mA: 30-100 D Excellent Safe Area Limits Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Colle... |
| Description |
Silicon PNP Transistor Audio Power Output
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| File Size |
22.84K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE50 NTE49
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| OCR Text |
...0mA, VCE = 5V 80 60 - - - - 125 100 55 0.18 0.1 0.74 - - - 0.4 - 1.2 V V V V(BR)CEO IC = 1mA, IB = 0 V(BR)EBO IE = 100A, IC = 0 ICBO VCB = 40V, IE = 0 100 4 - - - - - - 100 V V nA Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Tes... |
| Description |
Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver
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| File Size |
26.48K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE595
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| OCR Text |
...- - - - Max 715 855 1000 1250 5 100 1.5 1.75 Unit mV mV mV mV A A pF V
Electrical Characteristics (Per Diode): (TJ = +25C unless otherwise specified)
Parameter Reverse Recovery Time (When switched from IF = 10mA to IR = 10mA Recovery Ch... |
| Description |
Silicon Diode, Dual, Common Cathode, High Speed
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| File Size |
18.31K /
2 Page |
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it Online |
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