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  10.9a Datasheet PDF File

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    DMN3070SSN-15

Diodes Incorporated
Part No. DMN3070SSN-15
OCR Text ...e-body leakage i gss ? ? 10 a v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 1.1 ? 2...9a total gate charge (v gs = 10v) q g ? 13.2 ? gate-source charge q g s ? 2.2 ? gate-dr...
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 245.11K  /  6 Page

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    FDS9933BZ

Fairchild Semiconductor
Part No. FDS9933BZ
OCR Text ...0V VGS = 12V, VDS = 0V -20 -9 1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to...9A VGS = -2.5V, ID = -4.0A VGS = -4.5V, ID = -4.9A, TJ = 125C VDD = -10V, ID = -4.9A -0.4 -0.9 3 38 ...
Description -20V Dual P-Channel 2.5V Specified PowerTrenchMOSFET
Dual P-Channel 2.5V Specified PowerTrench㈢ MOSFET
Dual P-Channel 2.5V Specified PowerTrench? MOSFET

File Size 287.74K  /  6 Page

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    FDMA2002NZ FDMA2002NZ08

http://
Fairchild Semiconductor
Part No. FDMA2002NZ FDMA2002NZ08
OCR Text ...meter Ratings 30 12 2.9 2.7 10 (Note 1a) (Note 1b) Units V V A Drain Current - Continuous (TC = 25C, VGS = 4.5V) - Continuous (T...9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85C VGS = 3.0V, ID = 2.7A...
Description Dual N-Channel PowerTrench? MOSFET
Dual N-Channel PowerTrench㈢ MOSFET

File Size 542.25K  /  6 Page

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    FDFMA3N10908

Fairchild Semiconductor
Part No. FDFMA3N10908
OCR Text ...meter Ratings 30 12 2.9 2.7 10 1.5 0.65 -55 to +150 28 1 Units V V A W C V A (Note 1a) (Note 1b) Thermal Characteristics R...9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85C VGS = 3.0V, ID = 2.7A...
Description Integrated N-Channel PowerTrench? MOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode

File Size 363.60K  /  7 Page

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    Advanced Power Electron...
Part No. AP9561GM-HF-16
OCR Text ...rrent v ds =-32v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-9a - 26 42 nc q gs gate-source charge v ds =-32v - 4 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 17 - nc...
Description Fast Switching Characteristic

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    KI4539ADY

Guangdong Kexin Industrial Co.,Ltd
Part No. KI4539ADY
OCR Text ...ol VDS VGS ID 5.9 4.7 N-Channel 10 secs Steady State 30 20 4.4 3.6 30 -1.7 2 1.3 -0.9 1.1 0.7 -4.9 -3.9 P-Channel 10 secs Steady State -30 2...9A P-Ch N-Ch P-Ch N-Ch P-Ch N Channel VDD = 15 V, RL = 15 ID= 1A, VGEN = 10V, Rg = 6 N-Ch P-Ch N-Ch ...
Description N- and P-Channel 30-V (D-S) MOSFET

File Size 55.78K  /  2 Page

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    KI4501DY

Guangdong Kexin Industrial Co.,Ltd
Part No. KI4501DY
OCR Text ...*Surface Mounted on FR4 Board;t 10 sec TJ, Tstg IDM IS PD Symbol VDS VGS ID N-Channel 30 20 9 7.4 30 1.7 2.5 1.6 -55 to 150 P-Channel -8 8 6...9A Drain Source On State Resistance* rDS(on) VGS = -4.5 V, ID = -6.2A VGS = 4.5 V, ID = 7.4A VGS = -...
Description Complementary MOSFET Half-Bridge (N- and P-Channel)

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    KI5504DC

Guangdong Kexin Industrial Co.,Ltd
Part No. KI5504DC
OCR Text ...mbol VDS VGS ID 3.9 2.8 2.9 2.1 10 -1.8 2.1 1.1 -55 to 150 -0.9 1.1 0.6 N-Channel 5 secs Steady State 30 20 2.8 2.0 2.1 1.5 P-Channel 5 secs...9A VDS = -15 V, ID = -2.1A IS = 0.9A, VGS = 0 V IS = -0.9A, VGS = 0 V N-Channel VDS = 15V, VGS = 10V...
Description Complementary 30-V (D-S) MOSFET

File Size 66.14K  /  2 Page

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