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1.2-1.4w Datasheet PDF File

For 1.2-1.4w Found Datasheets File :: 4119 Search Time::3.141ms
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				LSI[LSI Computer Systems]
Part No.	LS6505
OCR Text	...P), LS6505-S (SOIC)- See Figure 1 APPLICATIONS: Wall and ceiling mounted occupancy sensors providing energy savings and convenience. DESCRIPTION (See Figure 2) The LS6505 is a CMOS integrated circuit, designed for detecting motion from a PI...
Description	PIR SENSOR INTERFACE
File Size	42.01K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF174
OCR Text	...tch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 3.0 dB Typ at 2.0 A, 150 MHz D MRF174 125 W, to 200 MHz N-CHANNEL MOS BROADBAND RF POWER FET . . . designed primarily for wideband large-signal output and driver stages up...
Description	N-CHANNEL MOS BROADBAND RF POWER FET
File Size	166.51K / 10 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GU1111 MRF175GV
OCR Text	...ax Unit OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS =...2.5 1.0 Vdc mAdc Adc 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise n...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	205.41K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	...ltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C ...2.27 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Max 0.44 Unit C...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	...ltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C ...2.27 -65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Max 0.44 Unit C/...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175LU MRF175LV
OCR Text	... PD Tstg TJ Value 65 40 13 270 1.54 - 65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resi...2.5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage fro...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	137.22K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175LV MRF175LU
OCR Text	...D PD Tstg TJ Value 65 40 13 270 1.54 -65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resis...2.5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage fro...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	143.35K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF176 MRF176GU MRF176GV
OCR Text	...ax Unit OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS =...2.5 1.0 Vdc mAdc Adc (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 MRF176GU MRF176GV 1 ...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	176.10K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF177
OCR Text	...eting in Phoenix, AZ. 6 5, 8 7 1, 4 2 3 CASE 744A-01, STYLE 2 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C (1)...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	184.73K / 6 Page	View it Online	Download Datasheet

For 1.2-1.4w Found Datasheets File :: 4119 Search Time::3.141ms
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