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ADPOW[Advanced Power Technology]
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| Part No. |
APT10035LLL APT10035B2LL APT10035B2LL_03 APT10035B2LL03
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| OCR Text |
0.350
POWER MOS 7
(R)
R
MOSFET
B2LL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode po...50mH, RG = 25, Peak IL = 28A 5 dv/dt numbers reflect the limitations of the test circuit rather than... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
90.00K /
5 Page |
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MICROSEMI[Microsemi Corporation]
ADPOW[Advanced Power Technology]
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| Part No. |
APT100S20B
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| OCR Text |
...lts
(TC = 125C, Duty Cycle = 0.5)
1
120 318 1000 -55 to 150 300 100
C mJ Amps
RMS Forward Current (Square wave, 50% duty)
Non-...50mH)
STATIC ELECTRICAL CHARACTERISTICS
Symbol IF = 100A VF Forward Voltage IF = 200A IF = 100A,... |
| Description |
HIGH VOLTAGE SCHOTTKY DIODE
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| File Size |
189.87K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT2X101S20J
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| OCR Text |
...urrent (TC = 105C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Operating and StorageTemperature Range Avalanche Energy (2A, 50mH)
120 213 1000 -55 to 150 100
C mJ ... |
| Description |
HIGH VOLTAGE SCHOTTKY DIODE
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| File Size |
214.85K /
4 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT8043SFLL APT8043BFLL APT8043BFLL_04
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| OCR Text |
0.430
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MO...50mH, RG = 25, Peak IL = 20A 5 dv/dt numbers reflect the limitations of the test circuit rather than... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
159.66K /
5 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8043SLL APT8043BLL APT8043BLL_04 APT8043BLL04
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| OCR Text |
0.430
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOS...50mH, RG = 25, Peak IL = 20A 5 dv/dt numbers reflect the limitations of the test circuit rather than... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
159.18K /
5 Page |
View
it Online |
Download Datasheet |
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UNISONIC TECHNOLOGIES CO LTD
UTC[Unisonic Technologies]
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| Part No. |
MJE13002
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| OCR Text |
...E(sat)=1.0V(Max.) @Ic=1.0A, IB =0.25A *Switch Time- tf =0.7s(Max.) @Ic=1.0A.
1
TO-126
1: BASE
2:COLLECTOR
3: EMITTER
ABSOL...50mH
Vcc=20V Vclamp=300V
Vcc=125V Rc=125 D1=1N5820 or Equiv. RB=47
CIRCUIT VALUES
OUTPUT... |
| Description |
1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN SILICON POWER TRANSISTOR
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| File Size |
147.77K /
7 Page |
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it Online |
Download Datasheet |
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??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
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| Part No. |
MJE13003L-X-TA3-F-T MJE13003 MJE13003-TO-220 MJE13003-X-TA3-F-T
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| OCR Text |
...00 * Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100 Typical tc = 290ns @ 1A, 100 . * 700V Blocking Capability
APPLICATIONS
* Switc...50mH
VCC=125V RC=125 D1=1N5820 or Equiv. RC=47
Output Waveforms Test Waveforms
Ic Ic(pk) t
t... |
| Description |
NPN EPITAXIAL SILICON TRANSISTOR npn型外延硅晶体
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| File Size |
144.27K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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