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0.5-2ghz Datasheet PDF File

For 0.5-2ghz Found Datasheets File :: 1492 Search Time::3.578ms
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				http:// Vishay Telefunken VISAY[Vishay Siliconix]
Part No.	BFR193T BFR193TW
OCR Text	...st Conditions VCE = 20 V, VEB = 0 VCB = 10 V VEB = 1 V, IC = 0 IC = 1 mA IC = 50 mA, IB = 5 mA VCE = 8 V, IC = 30 mA Symbol Min ICES ICBO IEBO V(BR)CEO 12 VCEsat hFE 50 Typ Max Unit 100 mA 100 nA 1 mA V 0.5 V 150 0.1 100 Electrical AC...
Description	Silicon NPN Planar RF Transistor From old datasheet system
File Size	68.37K / 4 Page	View it Online	Download Datasheet

				http:// SIEMENS[Siemens Semiconductor Group]
Part No.	BFR193W Q62702-F1510
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Powe...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
File Size	57.01K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR193 Q62702-F1218
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Powe...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	57.05K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	SA2420 SA2420DH
OCR Text	... compensation to vary less than 0.2dB over the -40 to +85C temperature range. The wide-dynamic-range receive mixer has a 10.9dB noise figure...5 6 7 8 9 10 11 12 24 VCC 23 LNA OUT 22 GND 21 ATTEN SW 20 GND 19 RF IN/OUT 18 GND 17 Tx/Rx SW 16 GN...
Description	Low voltage RF transceiver . 2.45GHz 2400 MHz - 2500 MHz RF/MICROWAVE UP/DOWN CONVERTER Low voltage RF transceiver ― 2.45GHz
File Size	133.53K / 16 Page	View it Online	Download Datasheet

				STANFORD[Stanford Microdevices]
Part No.	SSW-224 SSW224
OCR Text	...ms. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-224 Preliminary Preliminary DC-6 GHz High Isolation SPDT GaAs MMIC...
Description	DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH
File Size	160.90K / 3 Page	View it Online	Download Datasheet

				STANFORD[Stanford Microdevices]
Part No.	SSW-408 SSW408
OCR Text	...SWR (off port) Output Power @ 2.0 GHz at 1 dB C ompressi on Thi rd Order Intercept TO IP Id Isw D evi ce C urrent Swi tchi ng Speed 10% to 9...5 28 22 18 1.2 1.5 1.2 1.5 +36 +34 +31 +55 +53 +50 40 10 Max. 1.3 1.5 VSWR on VSWR off P 1dB ...
Description	DC-4 GHz High Power GaAs MMIC SPDT Switch
File Size	103.63K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
Part No.	FU-632SEA-3M43A FU-632SEA-3M25A FU-632SEA-6M25A FU-632SEA-6M91A FU-632SEA-3M11A FU-632SEA-3M13A FU-632SEA-3M15A FU-632SEA-3M17A FU-632SEA-3M19A FU-632SEA-3M21A FU-632SEA-3M23A FU-632SEA-3M27A FU-632SEA-3M29A FU-632SEA-3M31A FU-632SEA-3M33A FU-632SEA-3M35A FU-632SEA-3M37A FU-632SEA-3M39A FU-632SEA-3M41A FU-632SEA-3M45A FU-632SEA-3M47A FU-632SEA-3M49A FU-632SEA-3M51A FU-632SEA-3M53A FU-632SEA-3M55A FU-632SEA-3M57A FU-632SEA-3M59A FU-632SEA-3M61A FU-632SEA-3M63A FU-632SEA-3M65A FU-632SEA-3M67A FU-632SEA-3M69A FU-632SEA-3M71A FU-632SEA-3M73A FU-632SEA-3M75A FU-632SEA-3M77A FU-632SEA-3M79A FU-632SEA-3M81A FU-632SEA-3M83A FU-632SEA-3M85A FU-632SEA-3M87A FU-632SEA-3M89A FU-632SEA-3M91A FU-632SEA-3MXXA FU-632SEA-6M11A FU-632SEA-6M13A FU-632SEA-6M15A FU-632SEA-6M17A FU-632SEA-6M19A FU-632SEA-6M21A FU-632SEA-6M23A FU-632SEA-6M27A FU-632SEA-6M29A FU-632SEA-6M31A FU-632SEA-6M33A FU-632SEA-6M35A FU-632SEA-6M37A FU-632SEA-6M39A FU-632SEA-6M41A FU-632SEA-6M43A FU-632SEA-6M45A FU-632SEA-6M47A FU-632SEA-6M49A FU-632SEA-6M51A FU-632SEA-6M53A FU-632SEA-6M55A FU-632SEA-6M57A FU-632SEA-6M59A FU-632SEA-6M61A FU-632SEA-6M63A FU-632SEA-6M65A FU-632SEA-6M67A FU-632SEA-6M69A FU-632SEA-6M71A FU-632SEA-6M73A
OCR Text	...ee Table 1. -1 35 11 3.5 10 7 3 0.05 35 23 40 3 -155 0.3 10 0 10 -140 1.0 1.0 120 0.5 1.0 0.1 Max. 35 30 100 1.7 Unit Laser operating Temperature Threshold current Operating current Operating voltage Input impedance Optical output power ...
Description	Replaced by PTH03020W,PTV03020W : 20 Amp 3.3V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85 Replaced by PTH03020W : Replaced by PTH05020W,PTV05020W : 20 Amp 5V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85 1.55 um EAM/DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL(WDM) 1.55微米EAM /半导体激光器与单模光纤尾纤（波分复用模块 Replaced by PTH05020W,PTV05020W : 20 Amp 5V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85 1.55微米EAM /半导体激光器与单模光纤尾纤（波分复用模块 Replaced by PTH03020W,PTV03020W : 20 Amp 3.3V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85
File Size	67.84K / 5 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] http://
Part No.	BFG193 Q62702-F1291
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Powe...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
File Size	48.58K / 6 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXG1006N
OCR Text	... operation * Low insertion loss 0.5dB (Typ.) at 2.0GHz * High isolation 27dB (Typ.) at 2.0GHz * High power switching P1dB (Typ.) 32dBm at 2....5 ISO1.5 IL2 ISO2 VSWR TSW f = 2.0GHz 24 Test Condition f = 1.0GHz Min. Typ. 0.3 35 40 0.4 29 32 0.5...
Description	High-Frequency SPDT Antenna Switch
File Size	69.74K / 4 Page	View it Online	Download Datasheet

				Mitel Networks, Corp. http:// MITEL[Mitel Networks Corporation] Mitel Semiconductor
Part No.	VENUS-L VENUS-LKG VENUS-QP1S VENUS-QP1T
OCR Text	...nput low, VIL Min. -30 -40 -30 -0.6 Typ. Max. 4.0 70 125 125 Vcc+0.6 Units V deg C deg C deg C V V Comments Pin temperature Ambient temperat...5 -0.1 -10 -10 Vcc+0.1 0.5 10 10 V V A A All logic inputs All logic inputs All logic inputs...
Description	CDMA/AMPS Dual Band RF Receiver 码分多址/ AMPS二元双波段射频接收机
File Size	85.69K / 7 Page	View it Online	Download Datasheet

For 0.5-2ghz Found Datasheets File :: 1492 Search Time::3.578ms
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