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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
C67078-S3133-A2 BUZ339
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| OCR Text |
...500 V
ID
11.5 A
RDS(on)
0.5
Package TO-218 AA
Ordering Code C67078-S3133-A2
Maximum Ratings Parameter Continuous drain cur...170W
k jg hf i
e
d
VGS [V] a 4.0
b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0
a
b
R... |
| Description |
From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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| File Size |
220.03K /
9 Page |
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it Online |
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Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
C67078-S3132-A2 BUZ344
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| OCR Text |
...
100 V
ID
50 A
RDS(on)
0.035
Package TO-218 AA
Ordering Code C67078-S3132-A2
Maximum Ratings Parameter Continuous drain c...170W
l kj i h g
VGS [V] a 4.0
b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0
0.09 RDS (on) 0.08 0.0... |
| Description |
From old datasheet system SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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| File Size |
218.31K /
9 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRAUDAMP3
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| OCR Text |
..., IHF-A weighted, AES-17 filter 0.01% THD+N @ 60W, 4 94% @ 120W, 4single channel driven, Class D stage OCP, OVP, UVP, DC protection, OTP Sel...170W 4 40 <250mA 14W 94% (Typical) Notes / Conditions IRS20124S gate driver, IRF6645 DirectFET MOSFE... |
| Description |
120W x 6 Channel Class D Audio Power Amplifier using IRS20124S and IRF6645
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| File Size |
3,314.51K /
40 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT6017JLL
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| OCR Text |
0.170w
S
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Q... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
56.72K /
2 Page |
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it Online |
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APEX[Apex Microtechnology]
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| Part No. |
MP240
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| OCR Text |
...o 85C. TYP 1 20 MAX 5 50 20 100 0.1 50 +VB - 15 -VB + 15 25 5 5 0 UNITS mV V/C V/V pA pA/V pA G pF V V dB V V RMS V V dB MHz V V V V A V/S S 100 25 V mA mA mA C/W C/W C/W C
SPECIFICATIONS
PARAMETER INPUT OFFSET VOLTAGE OFFSET VOLTAGE ... |
| Description |
POWER OPERATIONAL AMPLIFIER
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| File Size |
296.48K /
5 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE213
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| OCR Text |
.... . . . . . . . . . . . . . . . 0.5W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +110C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . .... |
| Description |
Germanium PNP Transistor High Power, High Gain Amplifier
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| File Size |
22.44K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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