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ST Microelectronics
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| Part No. |
TDA2006H
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| OCR Text |
...nput bias current v s = 15v 0.2 3 m a v os input offset voltage v s = 15v 8mv i os input offset current v s = 15v 80 na v os...12w, r l = 4 w p o = 8w, r l = 8 w 850 500 ma ma t j thermal shutdown junction temperature 145 c... |
| Description |
12W AUDIO AMPLIFIER
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| File Size |
1,426.99K /
12 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC41V7177
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| OCR Text |
...lity.
OUTLINE DRAWING
24+ /-0.3 R1.25 (1)
Unit: millimeters (inches)
FEATURES
Internally matched to 50ohm system High output power P1dB = 12W (TIP.) @ f=7.1 - 7.7 Hz High power gain GLP = 9.5 dB (TYP.) @ f=7.1 - 7.7 GHz High powe... |
| Description |
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
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| File Size |
221.92K /
3 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
TDA2006 1452 TDA2006H TDA2006V
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| OCR Text |
...0%, f = 1kHz RL = 4 RL = 8 Po = 0.1 to 8W, RL = 4, f = 1kHz Po = 0.1 to 4W, RL = 8, f = 1kHz Po = 10W, R L = 4, f = 1kHz Po = 6W, RL = 8, f ...12W, R L = 4 Po = 8W, RL = 8 40 29.5 0.5 Test Conditions Min. 6 40 0.2 8 80 10 100 12 8 0.2 0.1 2... |
| Description |
From old datasheet system 12W AUDIO AMPLIFIER
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| File Size |
191.77K /
12 Page |
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it Online |
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC41V6472
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| OCR Text |
...t: millimeters (inches)
24+/-0.3 R1.25 (1) 0.6+/-0.15 R1.2
Class A operation Internally matched to 50(ohm) system High output power
1...12W (TYP.) @ f=6.4~7.2GHz
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V6472
6.4 ~ 7.2GHz BAND 1... |
| Description |
6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
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| File Size |
184.81K /
2 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC41V5964
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| OCR Text |
...ility.
OUTLINE DRAWING
24+/-0.3 R1.25 (1)
Unit: millimeters (inches)
FEATURES
Internally matched to 50ohm system High output power P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz High power gain GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz High powe... |
| Description |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
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| File Size |
55.82K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC41V5964_04 MGFC41V5964 MGFC41V596404
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| OCR Text |
...ility.
OUTLINE DRAWING
24+/-0.3 R1.25 (1)
Unit: millimeters (inches)
FEATURES
Internally matched to 50ohm system High output power P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz High power gain GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz High powe... |
| Description |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
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| File Size |
208.96K /
3 Page |
View
it Online |
Download Datasheet
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