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  .5 4.0a Datasheet PDF File

For .5 4.0a Found Datasheets File :: 36532    Search Time::4.078ms    
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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ... V GE = 15V 80s PULSE WIDTH 1.5 2.0 2.5 3.0 1 4.0 V CE = 25V 80s PULSE WIDTH 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typi...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...= 125 C TJ = 25 C 10 10 1.5 V = 15V 80s PULSE WIDTH GE 2.0 2.5 3.0 1 4.0 V = 25V 80s PULSE WIDTH CE 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...URRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 83 W S ...4.0 V = 25V 80s PULSE WIDTH CE 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IR2110E6

IRF[International Rectifier]
Part No. IR2110E6
OCR Text ...eparate logic supply range from 5 to 20V Logic and power ground 5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle ed...4 VS 10 0 VSS + 5 -5 VSS Max. VS + 20 600 VB 20 VCC VSS + 20 5 VDD Units V Dynamic Electrical ...
Description HIGH AND LOW SIDE DRIVER

File Size 306.76K  /  14 Page

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    IR2110L6

IRF[International Rectifier]
Part No. IR2110L6
OCR Text ...eparate logic supply range from 5 to 20V Logic and power ground 5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle ed...4 VS 10 0 VSS + 5 -5 V SS Max. VS + 20 600 VB 20 VCC VSS + 20 5 VDD Units V Dynamic Ele...
Description HIGH AND LOW SIDE DRIVER

File Size 337.18K  /  14 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text ...eparate logic supply range from 5 to 20V Logic and power ground 5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle ed...4 VS 10 0 VSS + 5 -5 VSS VS + 20 400 VB 20 VCC VSS + 20 5 VDD V Dynamic Electrical Characteristic...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text ... Note 1 Note 1 VS 10 0 VSS + 3 -5 (Note 2) VSS -40 Max. VS + 20 500 600 VB 20 VCC VSS + 20 5 VDD 125 Units V C Note 1: Logic operational for VS of -4 to +500V. Logic state held for VS of -4V to -VBS. (Please refer to the Des...
Description HIGH AND LOW SIDE DRIVER

File Size 218.79K  /  16 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...0 140 3.8 160 1.1 20 420 22 16 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 22A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...42 30 140 160 1.1 20 420 22 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Res...4.5 7.5 1900 450 230 Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, I...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuou...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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