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  -m0 Datasheet PDF File

For -m0 Found Datasheets File :: 3364    Search Time::2.875ms    
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    RJP30H1DPP-M0

Renesas Electronics Corporation
Part No. RJP30H1DPP-m0
OCR Text m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? high speed switching: t r =80 ns typ., t f = 150 ns typ. ? low collector to emitter saturation voltage: v...
Description Silicon N Channel IGBT High speed power switching

File Size 146.19K  /  7 Page

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    RJK6052DPP-M0 RJK6052DPP-M0-T2

Renesas Electronics Corporation
Renesas Electronics, Corp.
Part No. RJK6052DPP-m0 RJK6052DPP-m0-T2
OCR Text M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1799-0100 Rev.1.00 Jul 02, 2009 Features * Low on-resistance * Low leakage current * High speed switching Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-...
Description Silicon N Channel MOS FET High Speed Power Switching
10 A, 600 V, 1.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN

File Size 77.34K  /  4 Page

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    RJP30E3DPP-M0

Renesas Electronics Corporation
Part No. RJP30E3DPP-m0
OCR Text m0 silicon n channel igbt high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ ? high speed switching tf = 150 ns typ ? low leak curr...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 185.57K  /  7 Page

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    RJP30E2DPP-M0

Renesas Electronics Corporation
Part No. RJP30E2DPP-m0
OCR Text m0 silicon n channel igbt high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter saturation voltage v ce(sat) = 1.7 v typ ? high speed switching tf = 150 ns typ ? low leak curr...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 147.20K  /  7 Page

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    RJL5032DPP-M0

Renesas Electronics Corporation
Part No. RJL5032DPP-m0
OCR Text m0 silicon n channel mos fet high speed power switching features ? low on-state resistance r ds(on) = 2.2 typ. (at i d = 1.5 a, v gs = 10 v, ta = 25 c) ? high speed switching ? built in fast recovery diode outline re...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 91.31K  /  7 Page

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    RJL5012DPP-M0

Renesas Electronics Corporation
Part No. RJL5012DPP-m0
OCR Text m0 silicon n channel mos fet high speed power switching features ? built-in fast recovery diode ? low on-resistance r ds(on) = 0.56 typ. (at i d = 6 a, v gs = 10 v, ta = 25 c) ? low leakage current ? high speed switch...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 94.53K  /  7 Page

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    RJK5033DPP-M0 RJK5033DPP-M0-T2

Renesas Electronics Corporation
Part No. RJK5033DPP-m0 RJK5033DPP-m0-T2
OCR Text m0 silicon n channel mos fet high speed power switching features ? low on-state resistance r ds(on) = 0.96 ? typ. (at i d = 3 a, v gs = 10 v, ta = 25 ? c) ? high speed switching outline renesas package code: prss0003af-a ...
Description Silicon N Channel MOS FET High Speed Power Switching
6 A, 500 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN

File Size 74.84K  /  7 Page

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    RJL6032DPP-M0 RJL6032DPP-M0-T2

Renesas Electronics Corporation
Part No. RJL6032DPP-m0 RJL6032DPP-m0-T2
OCR Text M0 Silicon N Channel MOS FET High Speed Power Switching Features Low on-state resistance RDS(on) = 3.3 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) High speed switching Built in fast recovery diode R07DS0250EJ0100 Rev.1.00 Jan 27, 2010 ...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 73.23K  /  7 Page

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    RJK5026DPP-M0 RJK5026DPP-M0-15

Renesas Electronics Corporation
Part No. RJK5026DPP-m0 RJK5026DPP-m0-15
OCR Text m0 silicon n channel mos fet high speed power switching features ? low on-resistance r ds(on) = 1.35 typ. (at i d = 3 a, v gs = 10 v, ta = 25 c) ? low leakage current ? high speed switching outline renesas package co...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 92.65K  /  7 Page

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    RJK5012DPP-M0 RJK5012DPP-M0-15

Renesas Electronics Corporation
Part No. RJK5012DPP-m0 RJK5012DPP-m0-15
OCR Text m0 silicon n channel mos fet high speed power switching features ? low on-resistance r ds(on) = 0.515 typ. (at i d = 6 a, v gs = 10 v, ta = 25 c) ? low leakage current ? high speed switching outline renesas package c...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 103.15K  /  7 Page

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