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  -3.9ghz Datasheet PDF File

For -3.9ghz Found Datasheets File :: 959    Search Time::3.313ms    
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    NJG1705V NJG1705V-C1 NJG1705V-C10 NJG1705V-C2 NJG1705V-C3 NJG1705V-C4 NJG1705V-C5 NJG1705V-C6 NJG1705V-C7 NJG1705V-C8 NJ

NJRC[New Japan Radio]
Part No. NJG1705V NJG1705V-C1 NJG1705V-C10 NJG1705V-C2 NJG1705V-C3 NJG1705V-C4 NJG1705V-C5 NJG1705V-C6 NJG1705V-C7 NJG1705V-C8 NJG1705V-C9 NJG1705V-L1 NJG1705V-L10 NJG1705V-L2 NJG1705V-L3 NJG1705V-L4 NJG1705V-L5 NJG1705V-L6 NJG1705V-L7 NJG1705V-L8 NJG1705V-L9 NJG1705V-R1
OCR Text ...SSOP10 V Type (Top View) 1 2 3 4 5 10 9 8 7 6 Pin Connection 1.LNAIN 2.LNACAP 3.GND 4.IFOUT 5.VLO 6.LOIN 7.GND 8.MIXIN 9.GND 10.LNAOUT...9GHz band) COMMON CONDITIONS: Ta=+25C, VLNA=VMIX=VLO=2.7V, fRF=1900MHz, f LO=1660MHz, f IF=240MHz, P...
Description 1.5/1.9GHz BAND FRONT-END GaAs MMIC

File Size 560.84K  /  26 Page

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    NJG1709KC1 NJG1709KC1-C1 NJG1709KC1-C10 NJG1709KC1-C11 NJG1709KC1-C2 NJG1709KC1-C3 NJG1709KC1-C4 NJG1709KC1-C5 NJG1709KC

NJRC[New Japan Radio]
Part No. NJG1709KC1 NJG1709KC1-C1 NJG1709KC1-C10 NJG1709KC1-C11 NJG1709KC1-C2 NJG1709KC1-C3 NJG1709KC1-C4 NJG1709KC1-C5 NJG1709KC1-C6 NJG1709KC1-C7 NJG1709KC1-R2 NJG1709KC1-C8 NJG1709KC1-C9 NJG1709KC1-L1 NJG1709KC1-L10 NJG1709KC1-L11 NJG1709KC1-L2 NJG1709KC1-L3 NJG1709KC1-L4 NJG1709KC1-L5 NJG1709KC1-L6 NJG1709KC1-L7 NJG1709KC1-L8 NJG1709KC1-L9 NJG1709KC1-R1
OCR Text ...NE NJG1709KC1 +2.7V typ. LNA 3.2mA typ. Mixer 5.1mA typ. (with Local Amplifier operation current) FLP10-C1 (Mount Size: 2.8 x 3.0 x 0.75m...9GHz, f LO=1660MHz, with test circuit 2) Gain, NF vs. Frequency (V =2.7V) 19 18 17 DD Pout ...
Description 1.5/1.9GHz BAND FRONT-END GaAs MMIC

File Size 777.51K  /  29 Page

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    SPM3252

Sanyo Semicon Device
Part No. SPM3252
OCR Text ...M3252] 0.6 Control voltage +3 / 0V. Miniature mold package. Low loss and high linearity by adopting -structure, thus allows this device ...9GHz Control voltage +3 / 0V f=1.9GHz Control voltage +3 / 0V f=1.9GHz f=1.9GHz Control voltage +3 /...
Description GaAs MMIC SPDT Switch

File Size 18.13K  /  3 Page

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    SPM3255

SANYO[Sanyo Semicon Device]
Part No. SPM3255
OCR Text 3 / 0V. * Mini molded package. * Low insertion loss, high linearity. Package Dimensions unit:mm 1273 [SPM3255] 0.6 0.4 6 4 0 to 0.1 1....9GHz f=1.9GHz f=810 to 1033MHz f=1.9GHz f=810 to 1033MHz f=1.9GHz f=810MHz to 1.9GHz f=810MHz to 1.9...
Description Single Power Supply Operation RF Switch MMIC

File Size 28.82K  /  3 Page

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    BFP196W Q62702-F1576

SIEMENS[Siemens Semiconductor Group]
Part No. BFP196W Q62702-F1576
OCR Text ...P 196W RIs Q62702-F1576 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 12 dB 18 ...
Description From old datasheet system
NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications)
NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

File Size 60.65K  /  7 Page

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    BFP196 Q62702-F1320

SIEMENS[Siemens Semiconductor Group]
Part No. BFP196 Q62702-F1320
OCR Text ...FP 196 RIs Q62702-F1320 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 18 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 10 10V dB 5V 3V...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

File Size 61.07K  /  7 Page

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    BFR181W Q62702-F1491

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181W Q62702-F1491
OCR Text ...R 181W RFs Q62702-F1491 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 20 dB 18 10V 5V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14...
Description NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
From old datasheet system

File Size 56.17K  /  7 Page

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    BFR181 Q62702-F1314

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181 Q62702-F1314
OCR Text ...FR 181 RFs Q62702-F1314 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Colle...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB dB ...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

File Size 57.16K  /  7 Page

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    BFS480 Q62702-F1531

SIEMENS[Siemens Semiconductor Group]
Part No. BFS480 Q62702-F1531
OCR Text ...Es Q62702-F1531 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-em...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB ...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
From old datasheet system

File Size 52.38K  /  6 Page

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    HA22033

HITACHI[Hitachi Semiconductor]
Part No. HA22033
OCR Text ...k Diagram in 1.5pF 4 5.6nH 2 3 Cs 100pF GND Vdd 5 1 out 100pF HA22033 Pin Arrangement GEA Monthly code (variable) Mark type 1 5 GEA Pin name RF out GND Cs RF in Vdd Function RF output Ground RF input Power s...
Description GaAs MMIC Low Noise Amplifier for Micro Wave Application

File Size 43.33K  /  12 Page

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