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For w static Found Datasheets File :: 83588 Search Time::1.391ms
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				Toshiba Semiconductor
Part No.	TPCC8104
OCR Text	...04 -20 150 -55 to 150 unit v a w w w mj a note: using continuously under heavy loads (e.g. the application of high temperatur...static characteristics (t static characteristics (t static characteristics (t static characteristics...
Description	MOSFETs
File Size	233.73K / 9 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AO7408
OCR Text	...0.35 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 280 425 320 maximum junction-to-ambient a units a i d 2 1.5 16 t a =...static parameters parameter conditions drain-source breakdown voltage on state drain current i d =25...
Description	Single LV MOSFETs (12V - 30V)
File Size	248.50K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCC8106
OCR Text	....9 -30 175 -55 to 150 unit v a w w w mj a note: using continuously under heavy loads (e.g. the application of high temperatur...static characteristics (t static characteristics (t static characteristics (t static characteristics...
Description	MOSFETs
File Size	235.67K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK1525DPP-M0 RJK1525DPP-M0T2 RJK1525DPP-M0-15
OCR Text	...el dissipation pch note4 30 w channel to case thermal impedance ? ch-c 4.17 ?c/w channel temperature tch 150 ?c storage temperat...static drain to source on state resistance r ds(on) ? 0.089 0.110 ? i d = 8.5 a, v gs = 10 v ...
Description	150V - 17A - MOS FET High Speed Power Switching
File Size	87.79K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK5002DPD RJK5002DPD-00J2 RJK5002DPD-15
OCR Text	...el dissipation pch note4 30 w channel to case thermal impedance ? ch-c 4.17 ? c/w channel temperature tch 150 ? c storage temper...static drain to source on state resistance r ds(on) ? 3.83 5.00 ? i d = 1.2 a, v gs = 10 v ...
Description	500V - 2.4A - MOS FET High Speed Power Switching
File Size	85.92K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS6680S
OCR Text	...0 20 (Note 1a) Units V V A w 11.5 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c...static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID =...
Description	30V N-Channel PowerTrench SyncFET⑩
File Size	220.76K / 9 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	HT4407
OCR Text	...dissipation a ta=25c pd 3.1 w ta=70c 2 junction and storage temperature r ange tj, tstg -50 to 150 c ht4407 ...static parameters bv dss id=-250a, vgs=0v -30 v i dss zero gate voltage drain current v...
Description	General Description
File Size	1,186.95K / 6 Page	View it Online	Download Datasheet

				ROHM
Part No.	RU1L002SNTL
OCR Text	...to ambient rth (ch-a) 625 ? c / w * each terminal mounted on a recommended land pulsed parameter type source current(body diode) drain curre...static drain-source on-stateresistance r ds (on) * ** * * * *** 2/6 2011.08 - rev.a downloaded fro...
Description	2.5V Drive Nch MOSFET
File Size	427.08K / 7 Page	View it Online	Download Datasheet

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