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AD381 MC4410 NATIONAL ANSR2N7 24LC32 HY6264 41621 CENTRAL
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  w infrared Datasheet PDF File

For w infrared Found Datasheets File :: 16615    Search Time::1.766ms    
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    VISHAY SEMICONDUCTORS
Part No. TSMF1040
OCR Text ..., yoke, axial ? dimensions (l x w x h in mm): 2.5 x 2 x 2.7 ? peak wavelength: p = 890 nm ? high radiant power ? angle of half intensity:...infrared emitting diode, rohs compliant, 890 nm, gaalas double hetero vishay semiconductors note t ...
Description 1.9 mm, 1 ELEMENT, infrared LED, 870 nm

File Size 199.79K  /  9 Page

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    Sharp Electrionic
Part No. GP2w0114YPS
OCR Text ... a low power transceiver: ? 7.6(w) 2.65(d) 2.0(h) mm, 40.28 mm 3  low power consumption with built-in shut-down mode 0.2 a (typ.)  low...infrared transceiver modules. they meet the mobile communication low power option within the irda s...
Description (GP2w0110YPS / GP2w0114YPS) Low Power infrared Transceiver

File Size 575.20K  /  14 Page

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    Vishay Intertechnology,Inc.
Part No. TSMF3710
OCR Text ... junction/ ambient r thja 450 k/w www.vishay.com 2 document number 81088 rev. 1.3, 21-feb-07 tsmf3710 vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless oth...
Description High Speed infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

File Size 123.94K  /  8 Page

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    Vishay Intertechnology,Inc.
Part No. TSHG6200
OCR Text ... junction/ ambient r thja 300 k/w www.vishay.com 2 document number 81078 rev. 1.5, 28-nov-06 tshg6200 vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless ot...
Description High Speed infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

File Size 111.26K  /  6 Page

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    Vishay Intertechnology,Inc.
Part No. TSFF5210
OCR Text ... junction/ ambient r thja 300 k/w www.vishay.com 2 document number 81090 rev. 1.5, 28-nov-06 tsff5210 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unles...
Description High Speed infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

File Size 107.21K  /  6 Page

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    VSMY1850

Vishay Siliconix
Part No. VSMY1850
OCR Text ...ge form: 0805 ? dimensions (l x w x h in mm): 2 x 1.25 x 0.85 ? peak wavelength: p = 850 nm ? high reliability ? high radiant power ? hig...infrared emitting diodes, 850 nm, surface em itter technology fig. 1 - power dissipation limit ...
Description High Speed infrared Emitting Diodes

File Size 178.32K  /  7 Page

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    PerkinElmer Optoelectro...
PerkinElmer Inc.
Part No. LHI333
OCR Text w s /, 29.6.2001 www.perkinelmer.com/opto europe: perkinelmer optoelectronics gmbh wenzel jaksch str 31 wiesbaden / germany phone +49(0)611...infrared-detector series is specially designed for light switching applications with many detectors...
Description    Dual Element Detector

File Size 214.66K  /  1 Page

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    VSMY2850G

Vishay Siliconix
Part No. VSMY2850G
OCR Text ...form: gw, rgw ? dimensions (l x w x h in mm): 2.3 x 2.3 x 2.8 ? peak wavelength: p = 850 nm ? high reliability ? high radiant power ? ver...infrared emitting diodes, 850 nm, surface em itter technology fig. 1 - power dissipation limit vs. ...
Description High Speed infrared Emitting Diodes

File Size 197.26K  /  8 Page

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