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New Jersey Semi-Conductor P...
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| Part No. |
STE53NA50
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| OCR Text |
... mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter test conditions drain-source id - 1 ma vgs - 0 breakdown voltage zero gate voltage vqs = max rating drain current (vos = 0) vds... |
| Description |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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| File Size |
214.30K /
4 Page |
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KODENSHI
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| Part No. |
KK2822M
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| OCR Text |
...r Dissipation at Tamb = 50 C at tease = 50 C Storage and Junction Temperature Value 15 1 1 1.4 -40,+150 Unit V A WW C
2
www.DataSheet4U.com
KK2822M
ELECTRICAL CHARACTERISTICS (Vs-6V, Tamb=25C, unless otherwise specified)
Symbo... |
| Description |
Dual Low - Voltage Power Amplifier
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| File Size |
169.52K /
4 Page |
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it Online |
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New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
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| Part No. |
STW7NA100
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| OCR Text |
... mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vos = 0) gate-body leakage current (vos = 0) test conditions id... |
| Description |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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| File Size |
119.31K /
3 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
STP25N06 STP25N06FI
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| OCR Text |
...j a electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vcs = 0) gate-body leakage current (vos = 0) test conditions !d... |
| Description |
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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| File Size |
151.01K /
3 Page |
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it Online |
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New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
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| Part No. |
BFX39 BFX40 BFX41
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| OCR Text |
...l power dissipation tarnb < 25c tease <25c storage and junction temperature bfx38 bfx39 -55v -55v -5v -1a 0.8w 4w -55 to 200 bfx40 bfx41 -75v -75v c
electrical characteristics (tj = 25c unless otherwise stated) parameter test conditions m... |
| Description |
PNP SILICON EPITAXIAL
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| File Size |
87.40K /
3 Page |
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it Online |
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New Jersey Semi-Conductor P...
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| Part No. |
TIP131
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| OCR Text |
...se current total dissipation at tease ^ 25 c tamb < 25 c storage temperature max. operating junction temperature value tip130 tip131 tip135 tip136 60 80 60 80 tip132 tip137 100 100 5 8 12 0.3 70 2 -65 to 150 150 unit v v v a a a w w c c for... |
| Description |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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| File Size |
85.62K /
2 Page |
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New Jersey Semi-Conduct...
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| Part No. |
MRF1001A
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| OCR Text |
...001a electrical specifications (tease - 25c) static [off] symbol bvceo bvebo bvcbo icbo vce(sat) test conditions collector-emitter breakdown voltage (1c = 5.0 madc) emitter-base breakdown voltage (ic= 0.1 madc) collector-base breakdown volt... |
| Description |
ELECTRICAL SPECIFICATIONS (tease - 25°C)
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| File Size |
78.59K /
3 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
STP36NE06FP
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| OCR Text |
... mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss less parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vos = 0) test conditions id... |
| Description |
N - CHANNEL 60V - 0.032Q - 36A - TO-220/TO-220FP STripFET?/a> POWER MOSFET
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| File Size |
149.11K /
3 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
2N5038
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| OCR Text |
...c/w electrical characteristics (tease = 25 c unless otherwise specified) symbol icev iceo iebo vceo(sus)* vcer(sus)* vcex(sus)* vce(sat)* vbe(sat)* vbe* fife* hfe ccbo tr ts tf is/b** es/b parameter collector cut-off current (vbe = -1.5v) c... |
| Description |
HIGH CURRENT NPN SILICON TRANSISTOR
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| File Size |
71.09K /
2 Page |
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it Online |
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