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IRF[International Rectifier]
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| Part No. |
IRHM7064 IRHM8064
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/ Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFE... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
91.42K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHF7130 JANSH2N7261 IRHF8130 JANSR2N7261
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
287.32K /
12 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNA8064 IRHNA7064
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
81.43K /
4 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics, Inc.
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| Part No. |
TSC101 TSC101CIYLT TSC101AILT TSC101AIYLT TSC101BILT TSC101BIYLT TSC101CILT
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| OCR Text |
...ge: 2.8 to 30V Wide common-mode surviving range: -0.3 to 60V (load-dump) Wide supply voltage range: 4 to 28V Low current consumption: ICC max = 300A Internally fixed gain: 20V/V, 50V/V or 100V/V Buffered output L SOT23-5 (Plastic package) P... |
| Description |
High side current sense amplifier The TSL1018 is composed of 18 1 channel buffers which are used to buffer the referencevoltage for
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| File Size |
114.17K /
18 Page |
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Omron
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| Part No. |
G2RL-XXX G2RL124DC
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| OCR Text |
...still perform as expected after surviving the many handling and mounting processes involved in mass production. Also, even though OMRON relays are individually tested a number of times, and each meets strict requirements, a certain testing ... |
| Description |
PCB Relay
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| File Size |
127.72K /
5 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHM7360SE JANSR2N7391
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A) TRANSISTOR N-CHANNEL(BVdss=400V Rds(on)=0.20ohm Id=22A)
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| File Size |
90.55K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHM7360 IRHM8360
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET... |
| Description |
400V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package REPETITIVE AVALANCHE AND dv/dt RATED 400V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
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| File Size |
318.05K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRH7450SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the (SEE) process utilizes International Rectifier's patented HEXFET te... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A) TRANSISTOR N-CHANNEL(BVdss=500V Rds(on)=0.51ohm Id=11A)
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| File Size |
99.29K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRH8450 IRH7450
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
297.44K /
12 Page |
View
it Online |
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