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  sot-385 Datasheet PDF File

For sot-385 Found Datasheets File :: 502    Search Time::1.281ms    
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    TP0202K13 TP0202K-T1-GE3

Vishay Siliconix
Part No. TP0202K13 TP0202K-T1-GE3
OCR Text ...l = lot tracea b ility to-236 (sot-23) to p v ie w 2 1 s d g 3 orderin g information: tp0202k-t1-e3 (lead (p b )-free) tp0202k-t1-ge3 (l...385 ma t a = 85 c - 280 pulsed drain current b i dm - 750 power dissipation a t a = 25 c p d 350 m...
Description P-Channel 30-V (D-S) MOSFET
   P-Channel 30-V (D-S) MOSFET

File Size 212.90K  /  8 Page

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    AME385AEAS AME385AEAT AME385AEET AME385AEHA AME385 AME385-12 AME385CEHA AME385CEET

AME, Inc.
AME[Analog Microelectronics]
Part No. AME385AEAS AME385AEAT AME385AEET AME385AEHA AME385 AME385-12 AME385CEHA AME385CEET
OCR Text ...ges as well as the space saving SOT-23. n Key Features l Small packages: SOT-23, TO-92, SO-8 l Tolerates capacitive loads l Fixed revers...385 A EA S yyww A ME 385 A EA T yyww A BXww A ME 385A EHA yyww Package Operating Temp. R ange S ...
Description Micropower Voltage Reference Diode 微功耗电压基准二极管

File Size 67.12K  /  8 Page

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    20CJQ060

International Rectifier
Part No. 20CJQ060
OCR Text SOT-223 Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM VF TJ @ tp = 5 s sine @ 1 Apk, TJ = 125C (per leg) range 20CJQ060 2.0 60 385 0.56 Description/Features Units A V A V The 20CJQ060 surfac...
Description SCHOTTKY RECTIFIER 2 Amp

File Size 200.50K  /  5 Page

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    NSVBAS19LT1G SBAS20LT1G SBAS21LT3G SBAS21LT1G BAS20LT3G SBAS21DW5

ON Semiconductor
Part No. NSVBAS19LT1G SBAS20LT1G SBAS21LT3G SBAS21LT1G BAS20LT3G SBAS21DW5
OCR Text ...thode 1 anode 4 cathode 3 anode sot ? 23 (to ? 236) case 318 style 8 sc ? 88a (sot ? 353) case 419a sot ? 23 sc ? 88a ordering information s...385 mw thermal resistance ? junction ? to ? ambient derate above 25 c r ja 328 3.0 c/w mw/ c ma...
Description High Voltage Switching Diode

File Size 105.59K  /  6 Page

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    NSBC144EPDP6

ON Semiconductor
Part No. NSBC144EPDP6
OCR Text ... mun5313dw1t1g, smun5313dw1t1g* sot?363 3,000/tape & reel smun5313dw1t3g* sot?363 10,000/tape & reel nsbc144epdxv6t1g nsvbc144epdxv6t1g* sot...385 2.0 3.0 mw mw/ c thermal resistance, junction to ambient (note 1) (note 2) r ja 493 325 c/w ...
Description Complementary Bias Resistor Transistors

File Size 104.00K  /  10 Page

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    NSBC114EPDP6 NSBC114EPDP6T5G SMUN5311DW1T1G SMUN5311DW1T3G SMUN5311DW1T2G

ON Semiconductor
Part No. NSBC114EPDP6 NSBC114EPDP6T5G SMUN5311DW1T1G SMUN5311DW1T3G SMUN5311DW1T2G
OCR Text ... mun5311dw1t1g, smun5311dw1t1g* sot?363 3,000/tape & reel mun5311dw1t2g, smun5311dw1t2g* sot?363 3,000/tape & reel smun5311dw1t3g sot?363 10...385 2.0 3.0 mw mw/ c thermal resistance, junction to ambient (note 1) (note 2) r ja 493 325 c/w ...
Description Complementary Bias Resistor Transistors

File Size 96.42K  /  10 Page

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    NSBA143ZDXV6

ON Semiconductor
Part No. NSBA143ZDXV6
OCR Text ...ackage shipping ? mun5133dw1t1g sot ? 363 3,000 / tape & reel nsba143zdxv6t1g sot ? 563 4,000 / tape & reel nsba143zdp6t5g sot ? 963 8,000 /...385 2.0 3.0 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 493 325 c/w ...
Description Dual PNP Bias Resistor Transistors

File Size 121.81K  /  8 Page

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    MUN5335DW1T2G SMUN5335DW1T2G

ON Semiconductor
Part No. MUN5335DW1T2G SMUN5335DW1T2G
OCR Text ...? mun5335dw1t1g, smun5335dw1t1g sot ? 363 3,000/tape & reel mun5335dw1t2g, smun5335dw1t2g sot ? 363 3,000/tape & reel nsbc123jpdxv6t1g, nsvb...385 2.0 3.0 mw mw/ c thermal resistance, junction to ambient (note 1) (note 2) r ja 493 325 c/w ...
Description    Complementary Bias Resistor Transistors

File Size 159.48K  /  10 Page

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    BAT64 BAT64-04 BAT64-05 BAT64-06 Q62702-A961 Q62702-A963 Q62702-A879 Q62702-A962

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAT64 BAT64-04 BAT64-05 BAT64-06 Q62702-A961 Q62702-A963 Q62702-A879 Q62702-A962
OCR Text ... C/A 3 = C/C 3 = A/A Package SOT-23 SOT-23 SOT-23 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward...385 440 570 2 200 350 430 520 750 A VR = 25 V, TA = 25 C VR = 25 V, TA = 85 C Forward voltage...
Description Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Recognised Certification- 5W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system

File Size 91.55K  /  3 Page

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