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  segr-resistant Datasheet PDF File

For segr-resistant Found Datasheets File :: 176    Search Time::0.843ms    
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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 FSS230R1 FSS230R3
OCR Text SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhance...
Description RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

File Size 45.76K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. FSS234R FSS234D FN4053 FSS234R4 FSS234D1 FSS234D3 FSS234R1 FSS234R3
OCR Text SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhance...
Description From old datasheet system
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

File Size 44.72K  /  8 Page

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    FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN4485 FSS23A0R4 FSS23A0R3

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN4485 FSS23A0R4 FSS23A0R3
OCR Text SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to...
Description 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

File Size 56.22K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. FSS23A4R FSS23A4D FN4484 FSS23A4R4 FSS23A4D1 FSS23A4D3 FSS23A4R1 FSS23A4R3
OCR Text SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhance...
Description 7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 46.20K  /  8 Page

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    Intersil
Part No. FSYA9250R FSYA9250D FN4583
OCR Text SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET...
Description Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system

File Size 55.57K  /  8 Page

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    STRH8N10

STMicroelectronics
Part No. STRH8N10
OCR Text ... effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occ...
Description Rad-Hard N-channel 100 V, 6 A Power MOSFET

File Size 476.95K  /  18 Page

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    STRH40P10

STMicroelectronics
Part No. STRH40P10
OCR Text ...effect, bias circuit ). seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occ...
Description Rad-Hard P-channel 100 V, 34 A Power MOSFET

File Size 379.91K  /  18 Page

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    STRH40N6

STMicroelectronics
Part No. STRH40N6
OCR Text ... effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occu...
Description Rad-Hard N-channel 60 V, 30 A Power MOSFET

File Size 419.13K  /  16 Page

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    STRH100N6

STMicroelectronics
Part No. STRH100N6
OCR Text ... effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: seb test: drain voltage checked, trigger level is set to v ds = - 2 v. stop condition: as soon as a seb occ...
Description Rad-Hard N-channel, 60 V, 80 A Power MOSFET

File Size 384.61K  /  18 Page

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    STRH100N10

STMicroelectronics
Part No. STRH100N10
OCR Text ... effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occ...
Description Rad-Hard 100 V, 48 A N-channel Power MOSFET

File Size 449.34K  /  17 Page

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For segr-resistant Found Datasheets File :: 176    Search Time::0.843ms    
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