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FUJI[Fuji Electric]
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| Part No. |
2SK3680-01
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| OCR Text |
...30 IAS 52 IAR EAS dVDS/dt dV/dt PD 26 802.7 20 5 2.50 600 +150 -55 to +150 Unit V V A A V A Remarks VGS=-30V
Operating and storage Tch te...01
Characteristics
Allowable Power Dissipation PD=f(Tc)
800
FUJI POWER MOSFET
Typical Outpu... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
109.36K /
4 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SK3685-01
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| OCR Text |
...VGS 30 IAS 19 EAS dVDS/dt dV/dt PD Tch Tstg 245.3 20 5 2.50 235 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Remarks VGS=-30V
Tch...01
Characteristics
Allowable Power Dissipation PD=f(Tc)
400
50
FUJI POWER MOSFET
Typical O... |
| Description |
POWER MOSFET N-CHANNEL SILICON POWER MOSFET
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| File Size |
105.22K /
4 Page |
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it Online |
Download Datasheet
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FUJI[Fuji Electric]
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| Part No. |
2SK2528-01
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| OCR Text |
...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 5 20 30 80 150 -55 ~ +150 Unit V V A A V W C C
> Equivalent Circuit
- Ele...01
FAP-II Series
Drain-Source On-State Resistance
RDS(on) = f(Tch); ID=2,5A; VGS=10V
5A
80W... |
| Description |
N-channel MOS-FET
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| File Size |
154.70K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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