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84F1H L5987TR NTE3018 20AET1 3SD11 400000 20A63 TA0735A
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  pd-01 Datasheet PDF File

For pd-01 Found Datasheets File :: 46017    Search Time::1.312ms    
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    2SK3531-01

Fuji Electric
Part No. 2SK3531-01
OCR Text ...*1 244 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25C 2.02 Tc=25C 195 Tch +150 -55 to +150 Tstg Unit V V A A V A mJ kV/s kV/s W Equivalent circuit sc...01 Characteristics Allowable Power Dissipation PD=f(Tc) 8 200 FUJI POWER MOSFET 250 Typi...
Description    N-CHANNEL SILICON POWER MOSFET

File Size 110.38K  /  4 Page

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    2SK3535-01

Fuji Electric
Part No. 2SK3535-01
OCR Text ... IAR *2 EAS *1 dVDS/dt dV/dt *3 PD Tch Tstg Ratings 250 220 37 3.4 *4 148 30 37 251.9 20 5 2.4 *4 270 +150 -55 to +150 Unit V V A A A V A mJ...01 Characteristics Allowable Power Dissipation PD=f(Tc) 5 300 FUJI POWER MOSFET Allowable ...
Description    N-CHANNEL SILICON POWER MOSFET

File Size 112.23K  /  4 Page

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    FUJI[Fuji Electric]
Part No. 2SK3680-01
OCR Text ...30 IAS 52 IAR EAS dVDS/dt dV/dt PD 26 802.7 20 5 2.50 600 +150 -55 to +150 Unit V V A A V A Remarks VGS=-30V Operating and storage Tch te...01 Characteristics Allowable Power Dissipation PD=f(Tc) 800 FUJI POWER MOSFET Typical Outpu...
Description N-CHANNEL SILICON POWER MOSFET

File Size 109.36K  /  4 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SK3685-01
OCR Text ...VGS 30 IAS 19 EAS dVDS/dt dV/dt PD Tch Tstg 245.3 20 5 2.50 235 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Remarks VGS=-30V Tch...01 Characteristics Allowable Power Dissipation PD=f(Tc) 400 50 FUJI POWER MOSFET Typical O...
Description POWER MOSFET N-CHANNEL SILICON POWER MOSFET

File Size 105.22K  /  4 Page

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    2SK2687-01

Fuji Electric
Part No. 2SK2687-01
OCR Text ...bol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 50 200 16 520 60 150 -55 ~ +150 * L=0,277mH, VCC=12V > Equivalent Circuit Unit ...01 4130 1950 900 20 270 83 230 1,71 130 22 50 Unit V V A mA nA S pF pF pF ns ns ns ns A V...
Description N-CHANNEL MOS-FET

File Size 222.87K  /  3 Page

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    FUJI[Fuji Electric]
Part No. 2SK2528-01
OCR Text ...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 5 20 30 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Ele...01 FAP-II Series Drain-Source On-State Resistance RDS(on) = f(Tch); ID=2,5A; VGS=10V 5A 80W...
Description N-channel MOS-FET

File Size 154.70K  /  2 Page

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    2SK2525-01

Fuji Electric
Part No. 2SK2525-01
OCR Text ...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 450 450 9 36 30 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Ele...01 FAP-II Series Drain-Source On-State Resistance RDS(on) = f(Tch); ID=4,5A; VGS=10V 9A 80W...
Description N-CHANNEL MOS-FET

File Size 169.41K  /  2 Page

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    2SK2763-01

Fuji Electric
Part No. 2SK2763-01
OCR Text ... DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 800 4 16 30 4 358 100 150 -55 ~ +150 Unit V A A V A mJ W C C > Equivalent Circuit ...01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch); ID=2A; VGS=10V 4A...
Description N-channel MOS-FET

File Size 296.84K  /  3 Page

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    2SK3690-01

Fuji Electric
SANYO[Sanyo Semicon Device]
Part No. 2SK3690-01
OCR Text ...] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 600 600 4.5 18 30 4.5 261.1 8 20 5 80 2.02 +150 -55 to +150 Unit V V A A V A mJ mJ Remar...01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 90 80 70 60 Typ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 120.98K  /  4 Page

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