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mos-1.9a Datasheet PDF File

For mos-1.9a Found Datasheets File :: 415 Search Time::1.25ms
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				SUTEX[Supertex, Inc]
Part No.	VN0808 VN0808L VN0300 VN0300L
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Superte...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	428.73K / 2 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VN2406 VN2410 VN2410L VN2406L
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...1.6 mm from case for 10 seconds. 11/12/01 SGD TO-92 BVDSS BVDGS 20V -55C to +150C 300C ...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	436.83K / 2 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VN770P 6195
OCR Text	...tion turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is a...1/11 VN770P BLOCK DIAGRAM 2/11 VN770P CONNECTION DIAGRAM PIN FUNCTION No 1, 3, 25, 28...
Description	From old datasheet system QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS
File Size	94.23K / 11 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VN770 5364
OCR Text	...tegrated Power October 1998 MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is a...1/10 VN770 BLOCK DIAGRAM 2/10 VN770 CONNECTION DIAGRAM PIN FUNCTION No 1, 3, 25, 28 2...
Description	From old datasheet system QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS
File Size	86.27K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	VND05BSP VND05 VND05BSP13TR -VND05BSP
OCR Text	...tion turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is a...1 (GND) and ground, as shown in the typical application circuit (fig.3). The consequences of the vol...
Description	CAPACITOR, CLASS Y2 4.7NFCAPACITOR, CLASS Y2 4.7NF; Capacitance:4.7nF; Voltage rating, AC:250V; Voltage rating, DC:2500V; Capacitor dielectric type:Polypropylene; Series:B81122; Tolerance, :20%; Tolerance, -:20%; Temp, op. ISO HIGH SIDE SMART POWER SOLID STATE RELAY DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
File Size	225.65K / 9 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VP0808 VP0808L
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...1.6 mm from case for 10 seconds. 11/12/01 SGD TO-92 BVDSS BVDGS 30V -55C to +150C 300C ...
Description	P-Channel Enhancement-Mode Vertical DMOS FETs
File Size	428.22K / 2 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
OCR Text	...12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to...
Description	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
File Size	170.23K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL
OCR Text	...12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to...
Description	600V SMPS Series N-Channel IGBT 600V, SMPS Series N-Channel IGBTs 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V/ SMPS Series N-Channel IGBTs 600 V, SMPS N-Channel IGBT
File Size	180.89K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text	...Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These...1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to...
Description	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
File Size	202.82K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text	...TP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro...
Description	From old datasheet system 27A, 600V, UFS Series N-Channel IGBTs 27A/ 600V/ UFS Series N-Channel IGBTs
File Size	111.87K / 7 Page	View it Online	Download Datasheet

For mos-1.9a Found Datasheets File :: 415 Search Time::1.25ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |