| |
|
 |
Philips
|
| Part No. |
BUK9520-55
|
| OCR Text |
...b = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 10 52 37 208 116 175 UNIT V V V A A A W C
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. M... |
| Description |
TrenchMOS TM transistor
|
| File Size |
47.69K /
8 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Philips
|
| Part No. |
BUK7614-55 BUK7614-55A
|
| OCR Text |
...b = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 16 68 48 240 142 175 UNIT V V V A A A W C
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. M... |
| Description |
TrenchMOS(tm) transistor Standard level FET TrenchMOS TM transistor Standard level FET
|
| File Size |
50.92K /
8 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
| Part No. |
BUK9775-55 BUK9775-56
|
| OCR Text |
...b = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 10 11.7 7.4 47 19 150 UNIT V V V A A A W C
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. ... |
| Description |
TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET) TrenchMOS(商标)场效应晶体管逻辑电平TrenchMOS(商标)晶体管逻辑电平场效应管 TrenchMOS transistor Logic level FET 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
67.63K /
8 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
PHILIPS[Philips Semiconductors]
|
| Part No. |
BUK9624-55
|
| OCR Text |
...b = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 10 45 31 180 103 175 UNIT V V V A A A W C
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. M... |
| Description |
TrenchMOS transistor Logic level FET
|
| File Size |
67.46K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|