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max.60v Datasheet PDF File

For max.60v Found Datasheets File :: 10678 Search Time::1.375ms
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				PANASONIC CORP PANASONIC[Panasonic Semiconductor]
Part No.	2SB950 2SB950A 2SD1276A 2SD1276
OCR Text	...mA, VCC = -50V min typ max -200 -200 -500 -500 -2 Unit A A mA V -60 -80 1000 2000 10000 -2.5 -2 -4 20 0.3 2 0.5 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition freq...
Description	Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
File Size	60.93K / 2 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SB951 2SB951A 2SD1277A 2SD1277
OCR Text	... -2 V V MHz s s s 10000 min typ max -100 -100 -2 Unit A mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Ra...
Description	Silicon PNP epitaxial planar type Darlington(For midium-speed switching)
File Size	69.42K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB954 2SB954A
OCR Text	... -1.3 V V MHz s s s 250 min typ max -300 -300 -200 -200 -1 Unit A A mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Turn-on time Storage time Fall time *h FE1 R...
Description	Silicon PNP epitaxial planar type(For power amplification)
File Size	45.35K / 2 Page	View it Online	Download Datasheet

				WINGS[Wing Shing Computer Components]
Part No.	2SD1063
OCR Text	...B=0.4A Min 60 50 6 Typ Max Unit V V V mA mA V 70 0.1 0.1 280 0.4 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com
Description	NPN PLANAR SILICON TRANSISTOR
File Size	47.31K / 1 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SD1149
OCR Text	...0.05 100 1200 0.2 V MHz min typ max 100 1 Unit nA A V V V *1h FE1 Rank classification Rank hFE R 400 ~ 800 1VR S 600 ~ 1200 1VS Marking Symbol 0 to 0.1 s Absolute Maximum Ratings (Ta=25C) 0.1 to 0.3 0.40.2 0.8 ...
Description	Silicon NPN epitaxial planer type(For low-frequency amplification)
File Size	38.00K / 2 Page	View it Online	Download Datasheet

				WS WINGS[Wing Shing Computer Components]
Part No.	2SD389
OCR Text	...=0.2A VCE= 5V , IC=0.5A Min Typ Max 100 100 70 1.0 18 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com
Description	LOW FREQUENCY POWER AMPLIFIER(NPN)
File Size	68.25K / 1 Page	View it Online	Download Datasheet

				HSMC CORP. HI-SINCERITY MICROELECTRONICS, CORP. HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HTIP42C HTIP42
OCR Text	... fT Min. -100 -100 30 15 3 Typ. Max. -400 -700 -1 -1.5 -2 75 Unit V V uA uA mA V V Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V VCE=-60V VEB=-5V IC=-6A, IB=-600mA IC=-6A, VCE=-4V IC=-0.3A, VCE=-4V IC=-3A, VCE=-4V IC=-0.1A, VCE=-5V...
Description	PNP EPITAXIAL PLANAR TRANSISTOR 进步党外延平面晶体管
File Size	27.00K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...ting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W...60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 50A 28 ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...ting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W...60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 50A 28 ...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	... Temperature, for 10 seconds Max. 100V 70V 520 3.8 200 1.3 20 390 See Fig.12a, 12b, 15, 16 4.6 -55 to + 175 300 (1.6mm from case ) U...60V, VGS = 0V, TJ = 150C VGS = 20V VGS = -20V ID = 78A VDS = 60V VGS = 10VTX VDD = 38V ID = 78A RG =...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

For max.60v Found Datasheets File :: 10678 Search Time::1.375ms
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