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STMicroelectronics
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| Part No. |
M9306-RMN6T M93C86-BN3G M93C86-BN3P M93C86-BN3TG M93C56-WBN3G M93C56-WBN3P M93C56-WBN3TG M93C56-WBN3TP M93C56-WBN6G M93C56-WMB6G M93C56-WMB3G M93C56-WMN3P M93C56-WMB6TG M93C56-WMN3G M93C56-WMB3P M93C56-WMB3TG M93C56-WMB6P M93C56-WMB6TP M93C46-WDW6TG M93C46-WDW6TP M93C46-MN6TG M93C46-MN6TP M93C46-WDW3TP M93C46-WMN6TG M93C46-WMN6TP M9346-TWMN3T M93C56-WMB3TP M93C46-MN3G M93C46-MN3P M93C46-MN3TG M93C46-MN3TP M93C46-MN6G M93C46-MN6P M93C46-DW3G M93C46-DW3P M93C46-DW3TG M93C46-RMB3G M93C46-RMB3P M93C46-RMB3TG M93C46-RMB3TP M93C46-RMB6G M93C46-RMB6P M93C46-RMB6TG M93C66-MB3G M93C66-MB3P M93C66-MB3TG M93C66-MB3TP M93C66-MB6G M93C66-MB6P M93C66-MB6TG M93C66-RMB3G M93C66-RMB3P M93C66-RMB3TG M93C66-RMB3TP M93C66-RMB6G M93C76-MB3G M93C76-MB3P M93C76-MB3TG M93C76-MB3TP M93C76-MB6G M93C76-MB6P M93C76-MB6TG M93C76-MB6TP M93C76-RMB3G M93C76-RMB3P M93C76-RMB3TG M93C76-RMB3TP M93C76-RMB6G M93C76-RMB6P M93C86-MB3G M93C86-MB3P M93C86-MB3TG M93C86-MB3TP M93C86-MB6G M93C86-MB6P M93C86-MB6TG M93C46-WMN6G M93C56-MB3G M93C56-MB3P M93C56-MB3TG M93C56-MB3TP M93C56-MB6G M93C56-MB6P M93C56-MB6TG M93C56-WBN6P M93C66-RBN6P M93C56-RMN6P M93C74-MB3 M93C56-WBN6TP M93C56-WMN6G M93C56-BN6G M93C46-RBN6G M93C46-BN6G M
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| Description |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? Serial acceSS EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 Serial acceSS EEPROM
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial AcceSS EEPROM
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
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| File Size |
255.90K /
37 Page |
 View
it Online |
Download Datasheet
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意法半导
ST Microelectronics
STMicroelectronics N.V.
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| Part No. |
93C56 M9306-RDW3T M9306-RDS3T M9306-RDS6T M9306-RDW6T M9306-DW6T M9306-DW3T M9306-DS6T M9306-DS3T M93C06 M93C46 M93C86 M93C66 M9346-TDS6T M9346-TDW6T M9346-TDS3T M9346-TDW3T M9306-WBN6T M9306-WDS6T M9306-WDS3T M9306-WDW6T M9306-WBN3T M9306-WMN3T M9306-WMN6T M9306-WDW3T M93C06BN M93C06DS M93C06DW M93C46BN M93C46DS M93C46DW M93C46MN M93C56BN M93C46-R M93C46-W M93C56-W M9306-BN3T M9306-BN6T M9306-MN3T M9306-MN6T M93C46-RDW M93C46-MN M93C46-MB M93C46-RBN M93C46-RMB M93C46-RMN M9366-TRMN3T M93C66-RBN M9366-TRDW3T M93C66-DW M9366-TWBN6T M9366-TWDS3T M93C66-RDS M9366-TRMN6T M9366-TWBN3T M93C46-RDS M9366-TRBN3T M9366-TRBN6T M9366-TRDS6T M9366-TWDW3T M9366-TWDW6T M9366-TWMN3T M93C66-RDW M9366-TBN3T M9376-WDW3T M9376-WDW6T M9366-TRDW6T M9366-TWDS6T M9366-TBN6T M93C76-WBN M9376-WMN6T M9376-WBN6T M9376-WMN3T M9376-WDS6T M93C66-BN M9366-TRDS3T M9366-TWMN6T M93C76-WMN M9376-WDS3T M9376-WBN3T M9306-RMN3T M9306-RMN6T M9306-TRBN3T M9306-TRBN6T M9306-TRDS3T M9306-TRDS6T M9306-TRMN3T M9306-TWBN6T M9306-TWDS3T M9306-TWDS6T M9306-TWMN3T M9306-TWMN6T M9306-TRDW6T M9306-TWDW3T M9306-TRDW3T M9306-TWDW6T M9306-TWBN3T M9306-TRMN6T M9366-TMN6T M9366-TMN3T M9306-TDW6T M9306-TDS6T M9306-TDW3T M9306-TDS3T M9356
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| Description |
16Kbit / 8Kbit / 4Kbit / 2Kbit / 1Kbit and 256bit 8-bit or 16-bit wide
Round Conductor Flat Cable, 3749/100 30 AWG, .025 (0.64)
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 16KbitKbitKbitKbitKbit56 8位或16位全
CONNECTOR ACCESSORY 连接器附
HOT MELT ADHESIVE VO-Q 5/8X8" 16KbitKbitKbitKbitKbit位或16位宽）MICROWIRE串行EEPROM的访
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial AcceSS EEPROM 16KbitKbitKbitKbitKbit位或16位宽）MICROWIRE串行EEPROM的访
HOT MELT ADHESIVE Q 5/8X8" 16KbitKbitKbitKbitKbit位或16位宽）MICROWIRE串行EEPROM的访
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 16KbitKbit4KbitKbit1Kbit56 8位或16位全
TRANS PREBIASED NPN 200MW SOT323 16KbitKbitKbitKbitKbit56 8位或16位全
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
128 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial AcceSS EEPROM with Block Protection
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide) MICROWIRE Serial AcceSS EEPROM
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| File Size |
260.42K /
31 Page |
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it Online |
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意法半导
EEPROM
STMicroelectronics N.V.
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| Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
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| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C BuS EEPROM
MicroproceSSor CryStal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:25ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
CRYSTAL 9.84375MHZ 10PF SMD
UHF power tranSiStor
NPN 2 GHz RF power tranSiStor - @ f: 1900 MHz; @ f1: 1900 ; G<Sub>UMSub>: 7 dB; G<Sub>UMSub> @ f1: 7 dB; I<Sub>CSub>: 250 mA; P<Sub>totSub>: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
MicroproceSSor CryStal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:35ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:35ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
Single 10 bitS ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodeS - C<Sub>dSub> max.: 100@VR=4V pF; Configuration: dual c.a. ; I<Sub>FSub>: 1 A; I<Sub>FSMSub> max: 10 A; I<Sub>RSub> max: 1@VR=25V mA; V<Sub>FSub>max: 450@IF=1A mV; V<Sub>RSub>: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
MicroproceSSor CryStal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
Schottky barrier diode - C<Sub>dSub> max.: 10@VR=1V pF; Configuration: Single ; I<Sub>FSub> max: 200 mA; I<Sub>FSMSub> max: 300 A; I<Sub>RSub> max: 2.3@VR=25VA; V<Sub>FSub>max: 400@IF=10mA mV; V<Sub>RSub> max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double tranSiStorS
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpoSe tranSiStorS
NPN/PNP general purpoSe tranSiStor - DeScription: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
ThyriStorS - I<Sub>GTSub>: 32 mA; I<Sub>TSub> (R<Sub>MSSub>): 20 A; V<Sub>DRMSub>: 650 V
ThyriStorS - I<Sub>GTSub>: 32 mA; I<Sub>TSub> (R<Sub>MSSub>): 20 A; V<Sub>DRMSub>: 800 V
POT 200 OHM 3/4 RECT CERM MT
ThyriStorS logic level for RCD/GFI/LCCB applicationS - I<Sub>GTSub>: 0.2 (min 0.02) mA; I<Sub>TSub> (R<Sub>MSSub>): 0.8 A; V<Sub>DRMSub>: 500 V
ThyriStorS logic level for RCD/GFI/LCCB applicationS - I<Sub>GTSub>: 0.2 (min 0.02) mA; I<Sub>TSub> (R<Sub>MSSub>): 0.8 A; V<Sub>DRMSub>: 600 V
MicroproceSSor CryStal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:25ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:50ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
PowerMOS tranSiStor Logic level TOPFET - @ V<Sub>ISSub>: 5 V; I<Sub>DSub>: 15 A; Number of pinS: 3 ; R<Sub>DS(on)Sub>: 0.125 mOhm; V<Sub>DSSub>max: 50 V
Solder MaSking Agent; DiSpenSing Method:Jar; FeatureS:For Lead-Free ApplicationS; USed w/Tin/Lead SolderS; ProvideS Short-Term High-Temp. Protection; Leaded ProceSS Compatible:YeS; Volume:1gallon (US) RoHS Compliant: YeS
CRYSTAL 6.7458MHZ 20PF SMD
MicroproceSSor CryStal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:180ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/uS; Package: SOIC-W; No of PinS: 8; Container: Box
NPN 5 GHz wideband tranSiStor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; NoiSe figure: 3@f22.1@f1 dB; Ptot: 300
High-Speed Switching diodeS - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 nS; VFmax: 1@IF=50mA mV; VR max: 100 V
ThyriStorS logic level for RCD/GFI/LCCB applicationS - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: Single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 nS; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: Single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 nS; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; V<Su
ThyriStorS - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power tranSiStor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodeS - Cd max.: 100@VR=4V pF; Configuration: dual SerieS ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: Single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
ThyriStorS logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
ThyriStorS - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodeS - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: Single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bitS ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband tranSiStor
PowerMOS tranSiStor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pinS: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
ThyriStorS; logic level for RCD/GFI/LCCB applicationS - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
ThyriStor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
ThyriStorS logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
ThyriStorS logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bitS ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/S Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifSm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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| File Size |
144.80K /
25 Page |
View
it Online |
Download Datasheet |
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