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STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
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| Part No. |
M24C16-BN6TP M24C16-BN6TG M24C16-BN6TG_W M24C16-BN6T_G M24C16-BN6TP_G M24C16-BN3TP_G M24C16-BN6TG_G M24C16-BN6T_W M24C16-BN6TP_W M24C16-BN3TP_W M24C08-WMN6T M24C02-WMN3T M24C02-WMN3TG_W M24C02-WMN3TP_G M24C02-WMN3TP_W M24C08 M24C16-MB3T M24C16-MB3T_G M24C16-MB3T_W M24C16-MB3TG M24C16-MB3TG_G M24C16-MB3TG_W M24C16-MB3TP M24C16-MB3TP_G M24C16-MB3TP_W M24C16-MB6T M24C16-MB6T_G M24C16-MB6T_W M24C16-MB6TG M24C16-MB6TG_G M24C16-MB6TG_W M24C16-MB6TP M24C16-MB6TP_G M24C16-MB6TP_W M24C16-MN3T M24C16-MN3T_G M24C16-MN3T_W M24C16-MN3TG M24C16-MN3TG_G M24C16-MN3TG_W M24C16-MN3TP M24C16-MN3TP_G M24C16-MN3TP_W M24C16-MN6T M24C16-MN6T_G M24C16-MN6T_W M24C16-MN6TG M24C16-MN6TG_G M24C16-MN6TG_W M24C16-MN6TP M24C16-MN6TP_G M24C16-MN6TP_W M24C04-RMN3T M24C04-RMN3T_G M24C04-RMN3T_W M24C04-RMN3TG M24C04-RMN3TG_G M24C04-RMN3TG_W M24C04-RMN3TP M24C04-RMN3TP_G M24C04-RMN3TP_W M24C04-RMN6T M24C04-RMN6T_G M24C04-RMN6T_W M24C04-RMN6TG M24C04-RMN6TG_G M24C04-RMN6TG_W M24C04-RMN6TP M24C04-RMN6TP_G M24C04-RMN6TP_W M24C16-WMN6T M24C16-RMN6T M24C04-MN6T M24C04-MN6T_G M24C04-MN6T_W M24C04-MN6TG M24C04-MN6TG_G M24C04-MN6TG_W M24C04-MN6TP M24C04-MN6TP_G M24C04-MN6TP_W M24C16-WMN6T_G M24C16-WMN6T_W M24C16-WMN6TG M24C1
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| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C BuS EEPROM
45 V, 100 mA NPN general-purpoSe tranSiStorS
General purpoSe PIN diode
12-Bit, 2.5 uS Dual DAC, Serial Input, Pgrmable Settling Time, SimultaneouS Update, Low Power 8-CDIP -55 to 125
8-Bit ConStant-Current LED Sink Driver 16-TSSOP -40 to 125
Removal Tool, Han D; RoHS Compliant:N/A RoHS Compliant: YeS
CRIMP SET 0.14 - 0.50MM ;
NPN 1 GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; f<Sub>TSub>: 1 GHz; Frequency: 4.5 MHz; I<Sub>CSub>: 25 mA; NoiSe figure: 4.5@f1 dB; P<Sub>totSub>: 300 mW; Polarity: NPN ; VCEO max: 15 V
16-Channel LED Driver 100-HTQFP -20 to 85
8-Bit ConStant-Current LED Sink Driver 16-SOIC -40 to 125
8-Bit, 10 uS Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 14-SOIC -40 to 85
MicroproceSSor CryStal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
8-Bit, 10 uS Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 14-PDIP -40 to 85
ER 4C 4#4 PIN RECP WALL
8-Bit, 10 uS Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 16-SOIC 0 to 70
Power LDMOS tranSiStor
Three quadrant triacS guaranteed commutation - I<Sub>GTSub>: 25 mA; I<Sub>TSub> (R<Sub>MSSub>): 16 A; V<Sub>DRMSub>: 600 V
18-Bit RegiStered TranSceiver With 3-State OutputS 56-SSOP -40 to 85
45 V, 500 mA PNP general purpoSe tranSiStorS - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; I<Sub>CSub> max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 4C 4#4 SKT RECP WALL
Replaced by TLV5734 : 8-Bit, 20 MSPS ADC Triple Ch., Digital Clamp for YUV/NTSC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75
8-Bit, 10 uS Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 16-SOIC -40 to 85
NPN 1 GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; NoiSe figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V
Dual N-channel dual gate MOSFET - ID: 30 mA; IDSS: 100 (max) mA; VDSmax: 6 V
ER 23C 16 12 8 4 PIN RECP WALL
D87 - CONNECTOR ACCESSORY
ER 5C 3#12 2#0 SKT RECP WALL
Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V
Triple high-Speed Switching diodeS - Cd max.: 1.5 pF; Configuration: triple iSolated ; IF max: 200 mA; IFSM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 nS; VFmax: 1@IF=50mA mV; VR max: 100 V
NPN 5 GHz wideband tranSiStor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; NoiSe figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; SyStem frequency: 9
P-channel enhancement mode vertical D-MOS tranSiStor - Configuration: Single P-channel ; ID DC: 0.2 A; RDS(on): 12000@10V mOhm; VDSmax: 240 V
Removal Tool Han E CrimpcontactS in E Mo; RoHS Compliant:N/A
PNP 5 GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; V<Sub
Three quadrant triacS guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V
PowerMOS tranSiStor Logic level TOPFET - @ VIS: 5 V; ID: 0.7 A; Number of pinS: 3 ; RDS(on): 0.2 mOhm; VDSmax: 50 V
Silicon RF SwitcheS - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 mA; IGSS max: 100 nA; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB; VDSmax: 3 V; VSG max: 7 V
Schottky barrier double diodeS - Cd max.: 60@VR=4V pF; Configuration: dual SerieS ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-Speed double diode - Cd max.: 2.5 pF; Configuration: dual iSolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 nS; VFmax: 1@IF=200mA mV; VR max: 60 V
Schottky barrier double diodeS - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-Speed diode - Cd max.: 1 pF; Configuration: Single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 nS; VFmax: 1@IF=50mA mV; VR max: 75 V
NPN general purpoSe double tranSiStor - DeScription: Current Mirror
ER 30C 24#16 6#12 SKT RECP WAL
45 V, 500 mA PNP general purpoSe tranSiStorS - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 35C 28#16 7#12 SKT RECP WAL
ER 35C 28#16 7#12 PIN RECP WAL
Dual high-voltage Switching diodeS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
PowerMOS tranSiStor TOPFET high Side Switch 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
CONNECTOR ACCESSORY 连接器附
8-Bit, 10 uS Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 14-SOIC 0 to 70 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
Replaced by TLC5733A : 20 MSPS 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
TOPFET high Side Switch SMD verSion 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Silicon Bi-directional Trigger Device 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
For USe With:Harting Han D ContactS; Crimp Tool:Service Crimping Tool with Locator; Wire Size (AWG):26-16; Leaded ProceSS Compatible:YeS 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
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| File Size |
173.56K /
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意法半导
EEPROM
STMicroelectronics N.V.
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| Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
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| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C BuS EEPROM
MicroproceSSor CryStal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:25ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
CRYSTAL 9.84375MHZ 10PF SMD
UHF power tranSiStor
NPN 2 GHz RF power tranSiStor - @ f: 1900 MHz; @ f1: 1900 ; G<Sub>UMSub>: 7 dB; G<Sub>UMSub> @ f1: 7 dB; I<Sub>CSub>: 250 mA; P<Sub>totSub>: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
MicroproceSSor CryStal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:35ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:35ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
Single 10 bitS ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodeS - C<Sub>dSub> max.: 100@VR=4V pF; Configuration: dual c.a. ; I<Sub>FSub>: 1 A; I<Sub>FSMSub> max: 10 A; I<Sub>RSub> max: 1@VR=25V mA; V<Sub>FSub>max: 450@IF=1A mV; V<Sub>RSub>: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
MicroproceSSor CryStal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
Schottky barrier diode - C<Sub>dSub> max.: 10@VR=1V pF; Configuration: Single ; I<Sub>FSub> max: 200 mA; I<Sub>FSMSub> max: 300 A; I<Sub>RSub> max: 2.3@VR=25VA; V<Sub>FSub>max: 400@IF=10mA mV; V<Sub>RSub> max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double tranSiStorS
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpoSe tranSiStorS
NPN/PNP general purpoSe tranSiStor - DeScription: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
ThyriStorS - I<Sub>GTSub>: 32 mA; I<Sub>TSub> (R<Sub>MSSub>): 20 A; V<Sub>DRMSub>: 650 V
ThyriStorS - I<Sub>GTSub>: 32 mA; I<Sub>TSub> (R<Sub>MSSub>): 20 A; V<Sub>DRMSub>: 800 V
POT 200 OHM 3/4 RECT CERM MT
ThyriStorS logic level for RCD/GFI/LCCB applicationS - I<Sub>GTSub>: 0.2 (min 0.02) mA; I<Sub>TSub> (R<Sub>MSSub>): 0.8 A; V<Sub>DRMSub>: 500 V
ThyriStorS logic level for RCD/GFI/LCCB applicationS - I<Sub>GTSub>: 0.2 (min 0.02) mA; I<Sub>TSub> (R<Sub>MSSub>): 0.8 A; V<Sub>DRMSub>: 600 V
MicroproceSSor CryStal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:25ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:50ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
PowerMOS tranSiStor Logic level TOPFET - @ V<Sub>ISSub>: 5 V; I<Sub>DSub>: 15 A; Number of pinS: 3 ; R<Sub>DS(on)Sub>: 0.125 mOhm; V<Sub>DSSub>max: 50 V
Solder MaSking Agent; DiSpenSing Method:Jar; FeatureS:For Lead-Free ApplicationS; USed w/Tin/Lead SolderS; ProvideS Short-Term High-Temp. Protection; Leaded ProceSS Compatible:YeS; Volume:1gallon (US) RoHS Compliant: YeS
CRYSTAL 6.7458MHZ 20PF SMD
MicroproceSSor CryStal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:180ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/uS; Package: SOIC-W; No of PinS: 8; Container: Box
NPN 5 GHz wideband tranSiStor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; NoiSe figure: 3@f22.1@f1 dB; Ptot: 300
High-Speed Switching diodeS - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 nS; VFmax: 1@IF=50mA mV; VR max: 100 V
ThyriStorS logic level for RCD/GFI/LCCB applicationS - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: Single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 nS; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: Single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 nS; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; V<Su
ThyriStorS - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power tranSiStor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodeS - Cd max.: 100@VR=4V pF; Configuration: dual SerieS ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: Single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
ThyriStorS logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
ThyriStorS - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodeS - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: Single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bitS ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband tranSiStor
PowerMOS tranSiStor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pinS: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
ThyriStorS; logic level for RCD/GFI/LCCB applicationS - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
ThyriStor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
ThyriStorS logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
ThyriStorS logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bitS ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/S Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifSm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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