| |
|
 |
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
|
| Part No. |
HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB3164400AT-50 HYB3164400AT-40 HYB3165400ATL-40 HYB3165400AT-40 HYB3164400ATL-40 HYB3165400AJ-60
|
| OCR Text |
.../at(l) -60) 7.2 mw standby (lvttl) 3.24 mw standby (lvcmos) 720 m w standby for l-versions ? read, write, read-modify-write, cas -before-ras refresh (cbr), ras -only ref resh, hidden refresh and self refresh (l-version only) ? ... |
| Description |
16M x 4-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
|
| File Size |
252.48K /
26 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Vishay Intertechnology, Inc.
|
| Part No. |
HY5V26CF HY5V26CLF
|
| OCR Text |
...tage levels are compatible with lvttl. programmable options include the length of pipeline (read latency of 2 or 3), the number of cons ecutive read or write cycles in itiated by a single control command (burst length of 1,2,4,8, or fu ll ... |
| Description |
8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 8M × 16位| 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
| File Size |
249.02K /
14 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
