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WINBOND ELECTRONICS CORP
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| Part No. |
isd-T267SA/Q
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| OCR Text |
isd i
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... |
| Description |
TELEPHONE SPEECH CKT, PQFP100
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| File Size |
4,236.92K /
93 Page |
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International Rectifier
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| Part No. |
IRF1704
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| OCR Text |
...5, IAS = 100A. (See Figure 12) isd 100A, di/dt 150A/s, VDD V(BR)DSS, TJ 200C Pulse width 400s; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
... |
| Description |
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
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| File Size |
100.05K /
8 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP120NF04
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| OCR Text |
...ited by safe operating area (1) isd 120A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX. (2) Starting Tj = 25C, Id = 60A, VDD=30 V (#) Current Limited by Package
Table 4: Thermal Data
Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-... |
| Description |
N-CHANNEL 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET
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| File Size |
237.60K /
11 Page |
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HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
IRF234 IRF235 IRF236 IRF237
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| OCR Text |
...S:
VSD trr QRR
TJ = 25oC, isd = 8.1A, VGS = 0V, (Figure 13) TJ = 25oC, isd = 8.1A, disd/dt = 100A/s TJ = 25oC, isd = 8.1A, disd/dt = 100A/s
92 0.63
180 1.3
2.0 390 2.7
V ns C
2. Pulse test: pulse width 300s, duty cycle... |
| Description |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| File Size |
68.51K /
7 Page |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP11NM80 STB11NM80 STF11NM80 STW11NM80
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| OCR Text |
...e 8: Source Drain Diode
Symbol isd isdM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Re... |
| Description |
N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmeshPower MOSFET
N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET
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| File Size |
364.47K /
14 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP11NM60FDFP B11NM60FD P11NM60FD P11NM60FDFP STB11NM60FD STB11NM60FD-1 STP11NM60FD
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| OCR Text |
...mited by safe operating area 3. isd<11A, di/dt<400A/s, VDD= 80% V(BR)DSS
Table 2.
Thermal resistance
Value
Symbol
Parameter
TO-220 DPAK/IPAK
Unit TO-220FP 3.57 62.5 300 C/W C/W C
Rthj-case Thermal resistance junction-c... |
| Description |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)
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| File Size |
465.23K /
17 Page |
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it Online |
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