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  ion-implanted Datasheet PDF File

For ion-implanted Found Datasheets File :: 963    Search Time::0.703ms    
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    TISP2082L

Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
Part No. TISP2082L
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2082L V(Z) V 58 V(BO) V 82 q Planar Passivated Junctions Low Off-State Current < 10 A Rated for Inter...
Description DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 111.92K  /  5 Page

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    TISP2082

POINN[Power Innovations Ltd]
Power Innovations Limited
Part No. TISP2082
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2082 V(Z) V 58 V(BO) V 82 TO-220 PACKAGE (TOP VIEW) A(T) C(G) B(R) 1 2 3 q Planar Passivated...
Description DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 123.05K  /  6 Page

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    TISP2125F3 TISP2150F3 TISP2180F3 TISP2125F3D TISP2125F3DR TISP2150F3SL TISP2180F3SL

Power Innovations Limited
Part No. TISP2125F3 TISP2150F3 TISP2180F3 TISP2125F3D TISP2125F3DR TISP2150F3SL TISP2180F3SL
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2125F3 `2150F3 `2180F3 VDRM V 100 120 145 V(BO) V 125 150 180 D PACKAGE (TOP VIEW) T NC NC R 1 2 3...
Description Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection
DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 598.73K  /  18 Page

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    TISP2180L

POINN[Power Innovations Ltd]
Power Innovations Limited
Part No. TISP2180L
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2180L V(Z) V 145 V(BO) V 180 q Planar Passivated Junctions Low Off-State Current < 10 A Rated for Int...
Description DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 125.11K  /  6 Page

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    TISP2180

POINN[Power Innovations Ltd]
Power Innovations Limited
Part No. TISP2180
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2180 V(Z) V 145 V(BO) V 180 TO-220 PACKAGE (TOP VIEW) A(T) C(G) B(R) 1 2 3 q Planar Passivat...
Description DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 208.97K  /  11 Page

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    TISP2240F3 TISP2260F3 TISP2290F3 TISP2320F3 TISP2380F3 TISP2320F3SL

Power Innovations Limited
POINN[Power Innovations Ltd]
Part No. TISP2240F3 TISP2260F3 TISP2290F3 TISP2320F3 TISP2380F3 TISP2320F3SL
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2240F3 `2260F3 `2290F3 `2320F3 `2380F3 VDRM V 180 200 220 240 270 V(BO) V 240 260 290 320 380 D PACKAGE ...
Description Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection
DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 608.01K  /  18 Page

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    TISP2290L

POINN[Power Innovations Ltd]
Power Innovations Limited
Part No. TISP2290L
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2290L V(Z) V 200 V(BO) V 290 q Planar Passivated Junctions Low Off-State Current < 10 A Rated for Int...
Description DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 124.80K  /  6 Page

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    TISP2290

POINN[Power Innovations Ltd]
Power Innovations Limited
Part No. TISP2290
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2290 V(Z) V 200 V(BO) V 290 TO-220 PACKAGE (TOP VIEW) A(T) C(G) B(R) 1 2 3 q Planar Passivat...
Description DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 209.60K  /  11 Page

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    TISP2310L

POINN[Power Innovations Ltd]
Power Innovations Limited
Part No. TISP2310L
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2310L V(Z) V 250 V(BO) V 310 q Planar Passivated Junctions Low Off-State Current < 10 A Rated for Int...
Description DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 112.43K  /  5 Page

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    BIPOLARICS
Part No. BPT1819E03
OCR Text ...ility are assured by the use of ion implanted junctions, ion implanted ballast resistors and gold metallization. absolute maximum ratings: symbol parameters rating units v ces collector-base voltage 4...
Description High Performance Silicon Bipolar Transistor Intended

File Size 34.41K  /  1 Page

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For ion-implanted Found Datasheets File :: 963    Search Time::0.703ms    
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