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  id-8.8a Datasheet PDF File

For id-8.8a Found Datasheets File :: 3553    Search Time::1.265ms    
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    CHM4936JPT

Chenmko Enterprise Co. Ltd.
Part No. CHM4936JPT
OCR Text ...rce on-resistance m w vgs=10v, id=5.8a switching characteristics q gs gate-source charge q gd gate-drain charge t on turn-on time ns v dd = 15v i d = 1.0a , v g s = 10 v 15 t r rise time 20 1 b v d s s drain-source breakdo...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 185.57K  /  2 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FQI9N25C FQB9N25C FQB9N25CTM FQI9N25CTU
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...8.8 5.6 35.2 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C ...
Description 250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 865.84K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQI6N90 FQB6N90 FQB6N90TMAM002
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...8 3.7 23.2 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C G...
Description 900V N-Channel QFET
900V N-Channel MOSFET

File Size 595.13K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQI5N80 FQB5N80 FQI5N80TU
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...8 3.04 19.2 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C ...
Description 800V N-Channel QFET
800V N-Channel MOSFET

File Size 669.43K  /  9 Page

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FAIRCHILD[Fairchild Semiconductor]
Part No. FQI4N20L FQB4N20L FQI4N20LTU
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...8 2.4 15.2 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C G...
Description 200V LOGIC N-Channel MOSFET
200V N-Channel Logic Level QFET

File Size 515.98K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
http://
Part No. FQI3P20 FQB3P20 FQB3P20TM
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...8 -1.77 -11.2 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C ...
Description 200V P-Channel QFET
200V P-Channel MOSFET

File Size 559.07K  /  9 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...8 -3 V VGS = -2.5 V -8 Tc = 75 C -4 25 C -25 C -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -8 Tc = 75C -4 25C -25C...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ546

HITACHI[Hitachi Semiconductor]
Part No. 2SJ546
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 -8 V DS (V) -10 -8 Tc = 75C -4 25C -25C -1 -2 -3 -4 V GS (V) -5...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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    2SJ548

HITACHI[Hitachi Semiconductor]
Part No. 2SJ548
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -8 Tc = 75C -4 25C -25C...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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