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id-6.1a Datasheet PDF File

For id-6.1a Found Datasheets File :: 9319 Search Time::1.859ms
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				Microsemi, Corp. MICROSEMI CORP-SCOTTSDALE
Part No.	MSP1N5914BUR-1A MSP1N5915BUR-1A MSP1N5914BUR-1ATR MSP1N5916BUR-1ATR MSP1N5915BUR-1ATR MQ1N5928BUR-1B
OCR Text	...x and 1 0 % w i th a suffix id entifi c ation ? t i ght tolerance s avail abl e in p l us or min u s 2 % or 1% w i th c or d suffi...6 3.9 4.3 113.6 104.2 96.1 87.2 10 9.0 7.5 6.0 1.0 1.0 1.0 1.0 500 500 500 500 10...
Description	3.6 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB HERMETIC SEALED, GLASS, MELF-2 3.9 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB HERMETIC SEALED, GLASS, MELF-2 4.3 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB HERMETIC SEALED, GLASS, MELF-2 13 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
File Size	189.25K / 3 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS36800011 FDS3680
OCR Text	...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwi...6 V, ID = 4.5 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 5.2 A 2 2.4 -6.5 32 61 34 4 V mV/C...
Description	100V N-Channel PowerTrench MOSFET 100V N-Channel PowerTrench MOSFET
File Size	78.22K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDMA510PZ
OCR Text	...x rDS(on) = 30m at VGS = -4.5V, ID = -7.8A Max rDS(on) = 37m at VGS = -2.5V, ID = -6.6A Max rDS(on) = 50m at VGS = -1.8V, ID = -5.5A Max rDS(on) = 90m at VGS = -1.5V, ID = -2.0A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 ...
Description	Single P-Channel PowerTrench庐 MOSFET -20V, -7.8A, 30m惟
File Size	593.98K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	...) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 ...6 V -5 V -4.5 V -4 V (A) Typical Transfer Characteristics -5 V DS = -10 V Pulse Test -4 I D (A...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ517
OCR Text	...on) = 0.18 typ. (at V GS =-4V, ID =-1A) * Low drive current * High speed switching * 2.5V gate drive devices. Outline UPAK 3 D 2...6 Drain to Source Voltage -8 -10 V DS (V) 3 2SJ517 Drain to Source Saturation Voltage vs. ...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.79K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ518
OCR Text	...) = 0.35 typ. at (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching Outline UPAK 3 D 2 ...6 V -5 V -4 V -3 Pulse Test Typical Transfer Characteristics V DS = -10 V Pulse Test I D (A) ...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	46.74K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDMC8878
OCR Text	...Max rDS(on) = 14m at VGS = 10V, ID = 9.6A Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7A Low Profile - 1mm max in Power 33 RoHS Compliant tm ...6 7 8 D 1 D D D D D D S S S G 5 6 7 8 4G 3S 2S 1S 4 3 2 D Power...
Description	N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm
File Size	395.92K / 7 Page	View it Online	Download Datasheet

				Rohm
Part No.	ES6U42
OCR Text	...uous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 Tch PD 2 Limits -20 12 1.0 4.0 -0.4 -4.0 150 0.7 Unit V V A A A A C W / ELEMENT ...6.0 8.0 10.0 0.001 1.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 DRAIN-SOURCE VOLTAGE :...
Description	2.5V Drive Pch SBD MOSFET
File Size	222.12K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDFMA2P857
OCR Text	... rDS(on) = 120m at VGS = -4.5V, ID = -3.0A Max rDS(on) = 160m at VGS = -2.5V, ID = -2.5A Max rDS(on) = 240m at VGS = -1.8V, ID = -1.0A Ge...6 1.4 0.7 -55 to +150 30 1 Units V V A W C V A Thermal Characteristics RJA RJA RJA RJA Thermal R...
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.0A, 120mohm
File Size	354.11K / 8 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ562
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Condit...6 245 340 315 480 Conditions Ratings min -20 -10 10 -1.4 typ max Unit V A A V S m m Marking : JN ...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	146.08K / 4 Page	View it Online	Download Datasheet

For id-6.1a Found Datasheets File :: 9319 Search Time::1.859ms
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