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ROHM[Rohm]
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| Part No. |
2SB1240 2SB1182 2SB1188
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| OCR Text |
...(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. External dimensions (Unit : mm)
2SB1188
0.50.1
+0.2 4.5-0.1 1.60.1
2SB1182
1.50.3
6.50.2 5.1+0.2
-0.1
+0.2 1.5 -0.1
C0.5
... |
| Description |
Medium power Transistor(-32V, -2A)
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| File Size |
81.21K /
4 Page |
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UTC[Unisonic Technologies]
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| Part No. |
2SA1300
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| OCR Text |
...ity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) *Low Saturation Voltage *VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA)
1
SOT-89
1: Emitter 2: Collector 3:Base
ABSOLUTE MAXIMUM RATINGS (TA=2... |
| Description |
PNP EPITAXIAL SILICON TRANSISTOR
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| File Size |
105.99K /
3 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
2N6078
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| OCR Text |
...ated)
VCBO VCEX VCEO VCER VEBO IC ICM IB Ptot Tstg, Tj Collector - Base Voltage (IE = 0) Collector - Emitter Voltage (VEB - 1.5V) Collector...2A IC = 1.2A IB1 = IB2
Test Conditions
IC = 0.2mA IE = 1.0mA VCE = 250V IC = 0 IC = 1.2A IC = 5A... |
| Description |
NPN MULTI-EPITAXIAL POWER TRANSISTOR
From old datasheet system
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| File Size |
16.64K /
2 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD1260A 2SD1260
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| OCR Text |
...D1260 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.540.3 5.080.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00....2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = -8mA... |
| Description |
Silicon NPN triple diffusion planar type Darlington(For power amplification)
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| File Size |
62.93K /
2 Page |
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it Online |
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Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD1273 2SB1299
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| OCR Text |
...ature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
4.0
1.40.1
1.30.2
Solder Dip
0.5 +0.2 -0.1 0.80.1
2.540.25 5.080.5 1 2 3
...2A, IB = - 0.05A VCE = -12V, IC = - 0.2A, f = 10MHz 30 -60 300 700 -1 V MHz min typ max -100 -100 -1... |
| Description |
Silicon PNP epitaxial planar type(For power amplification)
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| File Size |
52.49K /
3 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
2N3583
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| OCR Text |
...SYMBOL
VCBO* VCEO* VCER* VEBO* IC* IC* IB* TSTG* TJ* * PT*
*
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collecto...2A, RBE = 50 (Notes 1 and 2) VCE = 225V, VBE = -1.5V VCE = 225V, VBE = -1.5V VCE = 150V, IB = 0 VEB... |
| Description |
5 Amp, 250V, High Voltage NPN Silicon Power Transistors
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| File Size |
62.33K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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