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				Alliance Semiconductor ETC[ETC]
Part No.	AS4LC1M16E5-60JC AS4LC1M16E5 AS4LC1M16E5-60TC AS4LC1M16E5-60TI AS4LC1M16E5-60JI AS4LC1M16E5-50JC AS4LC1M16E5-50JI AS4LC1M16E5-50TC AS4LC1M16E5-50TI
OCR Text	...0 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time * Read-modify-write * TTL-compatible, three-state DQ * J...fast-page mode' devices, data remains active on outputs after xCAS is de-asserted high, giving syste...
Description	3V 1M x 16 CMOS DRAM (EDO) 3V 1M X 6 CMOS DRAM (EDO)
File Size	468.78K / 22 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4E170811D K4E170812D K4E160811D K4E160812D
OCR Text	... within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50...Fast page mode with Extended Data Out) * CAS-before-RAS refresh capability * RAS-only and Hidden ref...
Description	2M x 8Bit CMOS Dynamic RAM with Extended Data Out
File Size	254.80K / 21 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group Infineon Technologies AG
Part No.	TDA6060XS
OCR Text	...quency range VHF Low, VHF High, Hyper band and UHF can be changed with different tank circuit applications. The modulator block (shown in Fi...fast mode (400 kHz) possible 2 Up to four PLL I C bus addresses selectable by the DC voltage applied...
Description	Video-Modulator with PLL 视频调制器与锁相
File Size	831.25K / 28 Page	View it Online	Download Datasheet

				ETC
Part No.	MX86250
OCR Text	...r dual WE DRAM. * Fast-page and Hyper-page EDO REV. 1.1, JUL 26, 1996 1 INDEX MX86250 Motion Video Codec Acceleration * YUV/YCrCb conversion of industry standard YUV 4.2.2 or 2.1.1 formats * Non-integer zoom in both X and Y direc...
Description	THE ADVANCED 64-BIT WINDOWS-95 AND DIRECTDRAW ACCELERATOR
File Size	102.42K / 25 Page	View it Online	Download Datasheet

				OKI
Part No.	MSM5416126A
OCR Text	...me Read Modify Write Cycle Time Hyper Page Mode Cycle Time Access Time from RAS Access Time from CAS Access Time from Column Address Access ...Fast Page Mode) RAS Hold Time RAS Hold Time referenced to OE CAS Pulse Width CAS Hold Time CAS to RA...
Description	131,072-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO From old datasheet system
File Size	351.33K / 23 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324025S-50 Q67100-Q2156 Q67100-Q2157 HYM324025S Q67100-Q2096
OCR Text	...104 ns cycle time (-60 version) Hyper page mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V ( 10 %) supply Low power dissipation max. 5280 mW active (HYM 324025S/GS-50) max. 4840 mW active (HY...
Description	4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72 4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组 4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72 4M x 32 Bit EDO DRAM Module
File Size	51.57K / 10 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364025S-50 Q67100-Q2367 HYM364025S Q67100-Q2366
OCR Text	...104 ns cycle time (-60 version) Hyper Page Mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V ( 10 %) supply Low power dissipation max. 6820 mW active (-50 version) max. 6160 mW active (-60 vers...
Description	4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72 4M x 36 Bit EDO DRAM Module with Parity
File Size	54.70K / 10 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	HYM72V2005GS-60 HYM72V2005GS-50 HYM72V2005GS-50-
OCR Text	...erage VCC supply current during hyper ICC4 page mode (EDO): -50 version -60 version (RAS = VIL, CAS, address cycling tPC = tPC min.) Standby VCC supply current (RAS = CAS = VCC - 0.2 V, one address change within 15,6 s trc) - - 1080 9...
Description	-2M x 72-Bit EDO-DRAM Module 2M x 72-Bit EDO-DRAM Module (ECC - Module) 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 50 ns, DMA168
File Size	65.27K / 11 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HYB314175BJ-60 HYB314175BJ-55 HYB314175BJ-50 HB314175 Q67100-Q2149 HYB314175BJ-50- Q67100-Q2148
OCR Text	...nly refresh, hidden-refresh and hyper page (EDO) mode capability 2 CAS / 1 WE control Self Refresh (L-Version) All inputs and outputs TTL-compatible 512 refresh cycles / 16 ms 512 refresh cycles / 128 ms Low Power Version only Plastic Packa...
Description	256k x 16 Bit EDO DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) From old datasheet system
File Size	1,305.55K / 24 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	HYB3164405L-60 HYB3164405L-50 HYB3164405T-60 HYB3164405T-50 HYB3164405J-60 HYB3164405J-50 HYB3165405J-60 HYB3165405J-50 HYB3165405TL-60 HYB3164405J HYB3164405TL-50 HYB3164405TL-60 HYB3165405T-50 HYB3165405T-60 HYB3165405TL-50
OCR Text	...0 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.3 V ( 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164405J/T(L)-50) max. 360 active mW ( HYB 3164405J/...
Description	16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
File Size	471.24K / 32 Page	View it Online	Download Datasheet

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