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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-F1347 BFP194
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| OCR Text |
... f = 1.8 GHz
Power gain
2)
gma
IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 9 3 12 7 -
IC = 70 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) gma = |S21/S12| (k-(k2-1)1/2)
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| Description |
From old datasheet system
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)
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| File Size |
60.78K /
7 Page |
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it Online |
Download Datasheet
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Siemens Semiconductor G...
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
Q62702-F1296 BFR180
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| OCR Text |
...0
mA IC
5.5
Power Gain gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
18 10V dB 3V
Power Gain gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
14
dB
G
14 2V
G
10V 5V 10 3V
12 1V 10 0.7V 8 6 1V 4 8 2V
6
0.7V
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| Description |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system
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| File Size |
56.20K /
7 Page |
View
it Online |
Download Datasheet |
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SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
http://
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| Part No. |
Q62702-F1292 BFG196
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| OCR Text |
... f = 1.8 GHz
Power gain
2)
gma
IC = 50 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 11.5 6 14 8.5 -
IC = 50 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) gma = |S21/S12| (k-(k2-1)... |
| Description |
From old datasheet system
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna and telecommunications)
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| File Size |
49.00K /
6 Page |
View
it Online |
Download Datasheet |
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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-F1189 BFQ82
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| OCR Text |
...500 MHz, Z0 = 50
Power gain gma, Gms, S21e 2 = f (IC) VCE = 8 V, f = 1 GHz, Z0 = 50
Power gain gma, S21e 2 = f (IC) VCE = 8 V, f = 2 GHz, Z0 = 50
BFQ 82
Power gain gma, Gms, S21e 2 = f ( f) IC = 5 mA, VCE = 8 V, Z0 = 50... |
| Description |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
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| File Size |
399.68K /
18 Page |
View
it Online |
Download Datasheet |
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