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				MAXIM - Dallas Semiconductor Dallas Semiconducotr DALLAS[Dallas Semiconductor]
Part No.	DS2505 DS2505P DS2505PT DS2505PTR DS2505T DS2505TR
OCR Text	...ing byte location within a data field. The command byte indicates if the device is to be read or written. Writing data involves not only issuing the correct command sequence but also providing a 12-volt programming voltage at the appropriat...
Description	16kb Add-Only Memory 16-kbit Add-Only Memory
File Size	523.32K / 24 Page	View it Online	Download Datasheet

				Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
Part No.	GAL20V8Z GAL20V8Z-12QJ GAL20V8Z-12QP GAL20V8Z-15QJ GAL20V8Z-15QP GAL20V8ZD-12QJ GAL20V8ZD-12QP GAL20V8ZD-15QJ GAL20V8ZD-15QP
OCR Text	...ice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified. Pin Configuration DIP PLCC I/CLK I/O/Q Vcc NC I I ...
Description	Zero Power E2CMOS PLD EE PLD, 15 ns, PDIP24 Zero Power E2CMOS PLD EE PLD, 15 ns, PQCC28
File Size	302.75K / 19 Page	View it Online	Download Datasheet

				LATTICE[Lattice Semiconductor] Lattice Semiconductor Corp
Part No.	GAL20V8 GAL20V8B-10LI GAL20V8B-10LJ GAL20V8B-10LJI GAL20V8B-10LPI GAL20V8B-15LJ GAL20V8B-15LJI GAL20V8B-15LP GAL20V8B-15LPI GAL20V8B-15QJ GAL20V8B-15QP GAL20V8B-20QJI GAL20V8B-20QPI GAL20V8B-25LJ GAL20V8B-25LJI GAL20V8B-25LP GAL20V8B-25LPI GAL20V8B-25QJ GAL20V8B-25QJI GAL20V8B-25QP GAL20V8B-25QPI GAL20V8B-7LI GAL20V8B-7LP GAL20V8C-10LJI GAL20V8C-10LP GAL20V8C-5LJ GAL20V8C-7LJ GAL20V8B-10LP GALB20V8B-10LI GALB20V8B-10LJ GALB20V8B-10LJI GALB20V8B-10LPI GALB20V8B-15LJ GALB20V8B-15LJI GALB20V8B-15LP GALB20V8B-15LPI GALB20V8B-15QJ GALB20V8B-15QP GALB20V8B-20QPI GALB20V8B-25LJI GALB20V8B-25LPI GALB20V8B-25QJI GALB20V8B-25QP GALB20V8B-25QPI GALB20V8B-7LI GALB20V8B-7LP
OCR Text	...ice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified. Pin Configuration DIP PLCC I/CLK I/CLK Vcc NC I/O...
Description	SIMPLE-EEPLD,PAL-TYPE,CMOS,DIP,24PIN,PLASTIC High Performance E2CMOS PLD Generic Array Logic
File Size	304.30K / 23 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HFA3861B HFA3861BIN HFA3861BIN96
OCR Text	...is programmed in the signalling field of the header. TX_RDY is an output to the external network processor indicating that Preamble and Header information has been generated and that the HFA3861B is ready to receive the data packet from the...
Description	Direct Sequence Spread Spectrum Baseband Processor
File Size	695.94K / 36 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...ncement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...ncement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...ION N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. Applications:* d.c. to d.c. converters * switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventional...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	...-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching ...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...ncement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are desig...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	...ncement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high spee...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

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