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Xian Semipower Electron...
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| Part No. |
SW9N90B
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| OCR Text |
... (note 1) 100 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 245 w derating factor above 25 o c 1.96 w/ o c t stg , t j operating junction temperature &... |
| Description |
N-channel Enhanced mode TO-220 MOSFET
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| File Size |
676.76K /
6 Page |
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it Online |
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Bruckewell Technology L...
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| Part No. |
MSF9N90
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| OCR Text |
...energy 28 mj dv/dt peak diode recovery dv/dt 4 .0 v/n s t j , t stg operating and storage temperature range - 55 to +150 c
msf9n 9 0 9 00v n - channel mo sfet publication order number: [ msf9n 9 0 ] ... |
| Description |
900V N-Channel MOSFET
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| File Size |
792.37K /
8 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
SPA04N80C3
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| OCR Text |
...mbol conditions unit continuous diode forward current i s a diode pulse current 3) i s,pulse 12 reverse diode d v /d t 5) d v /d t 4 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction -... |
| Description |
CoolMOSTM Power Transistor
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| File Size |
426.66K /
10 Page |
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it Online |
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Renesas Electronics Corporation
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| Part No. |
RJH60V3BDPP-M0-15
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| OCR Text |
...5c) ? built in fast recovery diode (25 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 75 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 17 a, rg = 5 ? , ta = 25c, inductive load) ... |
| Description |
600V - 17A - IGBT Application: Inverter
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| File Size |
100.50K /
10 Page |
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it Online |
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Renesas Electronics Corporation
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| Part No. |
RJH60V2BDPP-M0-15
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| OCR Text |
...5c) ? built in fast recovery diode (25 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 75 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 12 a, rg = 5 ? , ta = 25c, inductive load) ... |
| Description |
600V - 12A - IGBT Application: Inverter
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| File Size |
99.88K /
10 Page |
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it Online |
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Microchip
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| Part No. |
MD0100DK6-G
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| OCR Text |
...tion. the other purpose of the diode is to clamp voltage spikes to 0.7v during transmit cycle. a low voltage diode, for ex - ample 1.0v diode, is suficient since it will only see 0.7v. a bav99t dual diode from diodes, inc. was used in ou... |
| Description |
Ultrasound T/R Switch ICs
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| File Size |
253.67K /
9 Page |
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it Online |
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Jiangsu High diode Semi...
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| Part No. |
MBR20100L-F-CT-H
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| OCR Text |
... h igh diode semiconductor to- 220 ab ito- 220 ab case pin 2 pin 1 pin 3 1 2 3 1 2 3 hd to 82 schottky rectifier 100v low vf mbr20100l(f)ct item symbol unit test conditions r... |
| Description |
TO-220 Plastic-Encapsulate diodes
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| File Size |
1,378.19K /
3 Page |
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it Online |
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