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Infineon Technologies AG
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| Part No. |
IPD90P03P4-04
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| OCR Text |
...=100C, V GS=-10V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipati...50A, di F/dt =-100A/s
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50 70
-90 -360 -1.3 -
A
V ns nC
Current is limited by bond... |
| Description |
OptiMOS-P2 Power-Transistor 90 A, 30 V, 0.0045 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN, PLASTIC PACKAGE-3
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| File Size |
163.44K /
9 Page |
View
it Online |
Download Datasheet
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 |

Infineon Technologies AG
|
| Part No. |
IPD90P03P4L-04
|
| OCR Text |
...=100C, V GS=-10V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipati...50A, di F/dt =-100A/s
-
50 70
-90 -360 -1.3 -
A
V ns nC
Current is limited by bond... |
| Description |
90 A, 30 V, 0.0068 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN, PLASTIC PACKAGE-3 OptiMOS-P2 Power-Transistor
|
| File Size |
163.01K /
9 Page |
View
it Online |
Download Datasheet
|
|
For
current2.50a Found Datasheets File :: 53 Search Time::17.109ms Page :: | 1 | 2 | <3> | 4 | 5 | 6 | |
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