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  current2.50a Datasheet PDF File

For current2.50a Found Datasheets File :: 53    Search Time::17.109ms    
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    IPP100N04S3-03 IPB100N04S3-03 IPI100N04S3-03

Infineon Technologies AG
Part No. IPP100N04S3-03 IPB100N04S3-03 IPI100N04S3-03
OCR Text ...C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage tempera...50A, di F/dt =100 A/s - 0.85 60 95 100 400 1.3 - A V ns nC Current is limited by b...
Description OptiMOS-T Power-Transistor

File Size 194.88K  /  9 Page

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    UC621XXL-AF5-R UC621XX UC621XX-AF5-R UC62130

UTC[Unisonic Technologies]
E-Tech Electronics LTD
Part No. UC621XXL-AF5-R UC621XX UC621XX-AF5-R UC62130
OCR Text ...(Note 4) Supply Current1 Supply Current2 EXT Leakage Current High CE Level Current Low Input Stability (Note 4) Output Voltage Temperature Characteristics (Note 4) UC62133(VOUT(T)=3.3V) PARAMETER Output Voltage (Note2) Input Voltage EXT Out...
Description    BOOSTING VOLTAGE REGULATORS
CMOS IC

File Size 190.62K  /  14 Page

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    IPD90P03P4-04

Infineon Technologies AG
Part No. IPD90P03P4-04
OCR Text ...=100C, V GS=-10V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipati...50A, di F/dt =-100A/s - 50 70 -90 -360 -1.3 - A V ns nC Current is limited by bond...
Description OptiMOS-P2 Power-Transistor
90 A, 30 V, 0.0045 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN, PLASTIC PACKAGE-3

File Size 163.44K  /  9 Page

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    IPD50N06S2L-13

Infineon Technologies AG
Part No. IPD50N06S2L-13
OCR Text ...100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage tempera...50A Value 50 50 200 240 20 136 -55 ... +175 55/175/56 mJ V W C Unit A Rev. 1.0 page 1 2006-...
Description OptiMOS Power-Transistor

File Size 146.95K  /  8 Page

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    IPD90P03P4L-04

Infineon Technologies AG
Part No. IPD90P03P4L-04
OCR Text ...=100C, V GS=-10V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipati...50A, di F/dt =-100A/s - 50 70 -90 -360 -1.3 - A V ns nC Current is limited by bond...
Description 90 A, 30 V, 0.0068 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN, PLASTIC PACKAGE-3
OptiMOS-P2 Power-Transistor

File Size 163.01K  /  9 Page

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    IPP90N06S4-04 IPB90N06S4-04 IPI90N06S4-04

Infineon Technologies AG
Part No. IPP90N06S4-04 IPB90N06S4-04 IPI90N06S4-04
OCR Text ...C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipa...50A, di F/dt =100A/s 0.6 0.95 90 360 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=90A, V GS=0 to 10V...
Description OptiMOS-T2 Power-Transistor

File Size 168.53K  /  9 Page

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    IPD50N06S2-14

Infineon Technologies AG
Part No. IPD50N06S2-14
OCR Text ...100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage tempera...50A Value 501) 49 200 240 20 136 -55 ... +175 55/175/56 mJ V W C Unit A Rev. 1.1 page 1 200...
Description OptiMOS Power-Transistor

File Size 147.17K  /  9 Page

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    IPD90N06S4-04

Infineon Technologies AG
Part No. IPD90N06S4-04
OCR Text ...C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipa...50A, di F/dt =100A/s 0.6 0.95 90 360 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=90A, V GS=0 to 10V...
Description OptiMOS-T2 Power-Transistor

File Size 161.28K  /  9 Page

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    IPB120N06S4-02 IPI120N06S4-02 IPP120N06S4-02

Infineon Technologies AG
Part No. IPB120N06S4-02 IPI120N06S4-02 IPP120N06S4-02
OCR Text ...C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipa...50A, di F/dt =100A/s 0.9 120 480 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=120A, V GS=0 to 10V 63...
Description OptiMOS-T2 Power-Transistor

File Size 168.86K  /  9 Page

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    IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07

Infineon Technologies AG
Part No. IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07
OCR Text ...C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipa...50A, di F/dt =100A/s 0.6 0.95 80 320 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=80A, V GS=0 to 10V...
Description OptiMOS-T2 Power-Transistor

File Size 169.30K  /  9 Page

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For current2.50a Found Datasheets File :: 53    Search Time::17.109ms    
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