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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...obe Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (m...single nonrepetitive pulse -0.4 -0.8 -1.2 -1.6 -2 -2.4 10 0 0 Collector-emitter voltage VCE...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 189.75K  /  5 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...obe Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (...single nonrepetitive pulse -20 10000 Common emitter VCE = -2 V single nonrepetitive pulse hFE - I...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...obe Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (...single nonrepetitive pulse hFE - IC -5 (A) hFE IC -4 -40 Ta = 100C 25 Col...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...obe Applications * * * High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (m...single nonrepetitive pulse -5 (A) hFE IC -4 60 50 40 30 1000 Ta = 100C 25 -5...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ...0W Output Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specificat...single pulse (For PNP, minus sign is omitted.) 2 3 5 7 10 2 3 5 7 100 2 3 0.5 0 0 20 40 60 80...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...ter Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.15 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V ...single nonrepetitive pulse 1000 -30 -20 -15 -10 -8 -0.8 -6 -4 -0.4 IB = -2 mA hFE - IC Ta = 100C...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...ter Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (...single nonrepetitive pulse -0.6 -0.8 -1 -1.2 5000 hFE - IC 3000 Common emitter VCE = -2 V single...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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    2SA2087

ROHM[Rohm]
Part No. 2SA2087
OCR Text ... Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 1 Pw=10ms 2 Each terminal mount...single non repetitive Pulsed -1 -10 -100 10 -0.01 -0.1 -1 -10 1 -0.001 -0.01 -...
Description Power transistor

File Size 81.04K  /  4 Page

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    2SA2088

ROHM[Rohm]
Part No. 2SA2088
OCR Text ... Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 1 Pw=10ms 2 Each terminal mount...single non repetitive Pulsed -1 -10 -100 10 -0.01 -0.1 -1 10 -0.001 -0.01 -0.1 ...
Description Medium power transistor ( 60V/0.5A)
Medium power transistor (−60V, −0.5A)
Medium power transistor (-60V, -0.5A)

File Size 81.84K  /  4 Page

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    2SA2091S 2SA2091STPQ

TE Connectivity, Ltd.
ROHM[Rohm]
Part No. 2SA2091S 2SA2091STPQ
OCR Text ... Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Pw=100ms Pulsed Tj Tstg ...single non repetitive Pulsed -0.1 -1 -10 -100 10 -0.01 -0.1 -1 -10 1 -0.001 -0.01...
Description 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)

File Size 81.85K  /  4 Page

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