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cont.assy Datasheet PDF File

For cont.assy Found Datasheets File :: 54 Search Time::1.875ms
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					Infineon Technologies AG
Part No.	PTFA091201HL PTFA091201GL PTFA091201GL09
OCR Text	...tribution rf characteristics (cont.) two?tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 750 ma, p out = 110 ...assy rf_in rf_out lm l1 r4 q1 c4 l2 v dd v dd v dd reference circuit (cont.) reference circuit as...
Description	Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
File Size	382.55K / 10 Page	View it Online	Download Datasheet

					http:// INFINEON[Infineon Technologies AG]
Part No.	PTF211802A PTF211802E PTF211802
OCR Text	...F211802 Typical Performance (cont.) Intermodulation Distortion vs. Output Power for selected currents VDD = 28 V, f = 2140 MHz, tone ...assy Reference Circuit1 (not to scale) Component C1, C2, C3 C4, C10 C5, C11 C6, C9 C7 C8 C12, C18...
Description	LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
File Size	165.14K / 8 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PTFA180701E PTFA180701F
OCR Text	...TFA180701F RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, ...assy Reference circuit assembly diagram* (not to scale) Component C1, C2, C3 C4 C5 C6 C7, C9 C8, ...
Description	Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
File Size	359.94K / 11 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PTFA092201E PTFA092201F
OCR Text	...ilability. rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 30 v, i dq = 1850 ma, p out = 220...assy rf_in rf_out a082201in_02 a092201in_02 ro4350_.030 a082201out_02 a092201out_02 ro4350_.030 lm r...
Description	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
File Size	369.49K / 11 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PTF140451E PTF140451F
OCR Text	...2005-11-01 rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 550 ma, p out = 45 w ...assy-05-09-16 v dd v dd l 1 c5 c4 r6 r7 c9 c17 c18 c15 c10 c8 c16 r4 q1 qq1 c3 c1 r1 c2 r2 r5 lm c7 ...
Description	Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz
File Size	98.51K / 9 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PTFA081501E PTFA081501F
OCR Text	...2007-03-09 rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 950 ma, p out = 150 ...assy c15 c16 c13 c14 c23 c17 l1 c26 c27 c25 c20 c24 c18 c19 l2 c21 c22 r4 qq1 c3 c1 r1 c2 r2 r5 r3 c...
Description	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
File Size	249.95K / 10 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PTFA210301E
OCR Text	...2008-03-04 rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 300 ma, p out = 30 w...assy rf_in rf_out r4 qq1 q1 c5 c1 r1 c2 r2 r5 r3 c17 c10 c11 c4 r7 c3 r9 c9 r6 r8 c8 c6 c7 c14 c13 c...
Description	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
File Size	190.69K / 9 Page	View it Online	Download Datasheet

					Infineon Technologies A...
Part No.	PTFA091201E PTFA091201EV4R0 PTFA091201EV4R250 PTFA091201F
OCR Text	...fficiency typical performance (cont.) output power (p?1 db) vs. supply voltage i dq = 750 ma, ? = 960 mhz 49.5 50.0 50.5 51.0 51.5 52.0 5...assy rf_in rf_out lm l1 r4 q1 c4 l2 v dd v dd v dd reference circuit (cont.) reference circuit as...
Description	Thermally-Enhanced High Power RF LDMOS FETs
File Size	8,679.96K / 10 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PTFA212002E
OCR Text	...gain (db) typical performance (cont.) ptfa212002e preliminary data sheet 5 of 10 rev. 02, 2005-05-16 broadband circuit impedance frequenc...assy v dd v dd v dd ptfa212002e preliminary data sheet 9 of 10 rev. 02, 2005-05-16 package outline...
Description	Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz
File Size	219.69K / 10 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PTFA260451E
OCR Text	...06, 2008-03-04 rf performance (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 500 ma, p out = 45 w...assy 10 35v + rf_in rf_out c14 c16 c18 c15 c19 c17 c11 c12 c9 c10 qq1 c2 q1 c5 c4 r5 r1 r2 r3 r4 c1 ...
Description	Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
File Size	217.81K / 10 Page	View it Online	Download Datasheet

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