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chipsbank microelectronics Datasheet PDF File

For chipsbank microelectronics Found Datasheets File :: 150+ Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				ST microelectronics 意法半导 STmicroelectronics N.V. SGS Thomson microelectronics
Part No.	M28R400C-ZBT M28R400CTB120ZB1T M28R400CTB120ZB6T M28R400CTB90ZB1T M28R400CTB90ZB6T M28R400CTT90ZB1T M28R400CT M28R400CTT120ZB1T M28R400CTT120ZB6T M28R400CTT90ZB6T
Description	4 Mbit (256Kb x16/ Boot Block) 1.8V Supply Flash Memory 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 4兆位56Kb的x16插槽，引导块.8V电源快闪记忆
File Size	393.40K / 50 Page	View it Online	Download Datasheet

				SGS Thomson microelectronics ST microelectronics STmicroelectronics 意法半导
Part No.	M74HC164 M74HC164B1R M74HC164C1R M74HC164M1R M54HC164 M54HC164F1R 74164 74HC164
Description	8 BIT SIPO SHIFT REGISTER
File Size	253.52K / 12 Page	View it Online	Download Datasheet

				SGS Thomson microelectronics STmicroelectronics 意法半导 ST microelectronics
Part No.	STD2NA50 4862 STD2NA50-1
Description	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Supercapacitor; Capacitance:0.047F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:120ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes N-CHANNEL MOSFET
File Size	96.84K / 6 Page	View it Online	Download Datasheet

				STmicroelectronics N.V. 意法半导 ST microelectronics SGS Thomson microelectronics
Part No.	M29DW323DB70ZA6 M29DW323DT M29DW323DT70N1E M29DW323DT70N1F M29DW323DT70N1T M29DW323DB70ZE1 M29DW323DB70N6E M29DW323DB70ZE1E M29DW323DB70ZE6E M29DW323DB70ZE6F M29DW323DB70ZE1F M29DW323DB70ZA1E M29DW323DT90ZA6E M29DW323DB90ZA6T M29DW323DT70ZA6T M29DW323DB70ZA6T M29DW323DB90N1E M29DW323DT70ZE6T M29DW323DB90ZA1T M29DW323DT90ZA1T M29DW323DB90ZA6F M29DW323DB70N1E M29DW323DB70N1F M29DW323DT70ZE1T M29DW323DB70N1T M29DW323DT90N6T M29DW323DB90ZA1F -M29DW323DT90ZE6F -M29DW323DB90ZE6F -M29DW323DB70ZE6F -M29DW323DT70ZE6F M29DW323DT70N6F M29DW323DT70N6T M29DW323DT70ZA1 M29DW323DT70ZA1E M29DW323DT70ZA1F M29DW323DT70ZA1T M29DW323DT70ZA6 M29DW323DT70ZA6F M29DW323DT70ZE1 M29DW323DT70ZE1E M29DW323DT70ZE1F M29DW323DT70ZE6F M29DW323DB90ZA1E M29DW323DT90ZA1E M29DW323DT90ZA1F M29DW323DB70ZE6T M29DW323DB90ZE6T M29DW323DT90ZE6T M29DW323DB70N6F M29DW323DB90N6E M29DW323DB90ZE1F M29DW323DT90ZE1F M29DW323DT90N1 M29DW323DT90N1E M29DW323DB70N1 M29DW323DB90ZE6F M29DW323DT90ZE6F M29DW323DB90ZE1E M29DW323DT90N1T M29DW323DT90N1F M29DW323DT90N6
Description	CAP 100PF 50V 20% Z5U SMD-0805 TR-7 PLATED-NI/SN Low-Noise Precision Operational Amplifier 8-SOIC 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆 High-Speed, Low-Power, Precision Quad Operational Amplifier 20-LCCC -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双24分，启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆 High-Speed, Low-Power, Precision Quad Operational Amplifier 14-CDIP -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆 Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 14-PDIP 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
File Size	417.81K / 49 Page	View it Online	Download Datasheet

				STmicroelectronics N.V. ST microelectronics 意法半导 SGS Thomson microelectronics
Part No.	TDA7296V TDA7296
Description	70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY 70V 60瓦的DMOS音频放大器静意法半导体， 60V-60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
File Size	239.88K / 13 Page	View it Online	Download Datasheet

				ST microelectronics SGS Thomson microelectronics STmicroelectronics 意法半导
Part No.	74V1G125 74V1G125S
Description	SINGLE BUS BUFFER (3-STATE) SINGLE BUS BUFFER 3-STATE
File Size	55.99K / 8 Page	View it Online	Download Datasheet

				SGS Thomson microelectronics NUMONYX 意法半导 ST microelectronics
Part No.	M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W832BE85ZA6 M36W832BEZA M36W832TEZA M36W832BE70ZA1S M36W832BE70ZA1T M36W832BE70ZA6S M36W832BE70ZA6T M36W832TE85ZA1S M36W832TE85ZA6T M36W832TE70ZA1S M36W832TE70ZA6S M36W832BE85ZA1S M36W832BE85ZA1T M36W832BE85ZA6T
Description	SPECIALTY MEMORY CIRCUIT, PBGA66 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
File Size	486.00K / 64 Page	View it Online	Download Datasheet

				STmicroelectronics N.V. 意法半导 ST microelectronics SGS Thomson microelectronics
Part No.	HCF4518 HCF4518B HCF4518BC1 HCF4518BEY HCF4518BF HCF4518BM1 HCC4520B HCC4520BC1 HCC4520BEY HCC4520BF HCC4520BM1 HCF4520B HCF4520BC1 HCF4520BEY HCF4520BF HCF4520BM1 HCC4518B HCC4518BC1 HCC4518BEY HCC4518BF HCC4518BM1 HCC_HCF4518B HCC_HCF4520B -HCC4520B -HCC4520BM1
Description	Dual Up-Counters(???璁℃??? DUAL UP-COUNTERS 双向上计数器 Replaced by SN54S74 : Dual D-type Positive-Edge-Triggered Flip-Flops With Preset And Clear 14-CDIP -55 to 125 Dual Up-Counters(双加计数
File Size	321.03K / 14 Page	View it Online	Download Datasheet

				SGS Thomson microelectronics ST microelectronics 意法半导 STmicroelectronics N.V.
Part No.	STD2NB80 6424 STD2NB80T4
Description	From old datasheet system N-CHANNEL MOSFET N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 1.9A I(D) \| TO-252AA 晶体管\| MOSFET的\| N沟道\| 800V的五（巴西）直\| 1.9AI（四）\|52AA
File Size	91.06K / 9 Page	View it Online	Download Datasheet

				意法半导 STmicroelectronics SGS Thomson microelectronics ST microelectronics
Part No.	GSAC-8507BC GSAC-8507BC-1 GSAC-8507BC-2 GSAC-8.507BC -GSAC-8507BC-1 -GSAC-8507BC-2
Description	Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 18x35.5 mm; Packaging: Bulk BATTERY CHARGER
File Size	59.93K / 4 Page	View it Online	Download Datasheet

For chipsbank microelectronics Found Datasheets File :: 150+ Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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