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				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ248
OCR Text	... Pulse Width PW (S) 100 m 1 10 ch - c(t) = s(t) . ch - c ch - c = 5.0C / W. Tc = 25C PW D= T P DM T PW Tc = 25C 4 10.0 0.3 7.0 0.3 3.2 0.2 2.8 0.2 2.5 0.2 Unit: mm 0.6 5.0 0.3 2.0 0.3 1.2 0.2 1.4 0.2 ...
Description	Silicon P-Channel MOS FET
File Size	32.65K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ319 2SJ319L 2SJ319S
OCR Text	... 0.02 0.0 1 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C uls e PDM PW T 0.03 1s h P ot D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 6 2SJ319(L),...
Description	Power switching MOSFET Silicon P-Channel MOS FET
File Size	44.83K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ350
OCR Text	... 0.02 1 lse 0.0 pu ot h 1s ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C PDM PW T 0.03 D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 6 2SJ350 Switching Time Test Circuit ...
Description	Silicon P-Channel MOS FET
File Size	46.11K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ387 2SJ387L 2SJ387S
OCR Text	... 0.02 0.0 1 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 7 2SJ387(L), 2SJ...
Description	Silicon P-Channel MOS FET
File Size	46.71K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	HAT2210R-EL-E
OCR Text	...1shot pulse dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 125 c/w, ta = 25 c when using the glass epoxy board (fr4 40x40x...tc = 75 c 25 c ? 25 c channel dissipation pch (w) ambient temperature ta ( c) power vs....
Description	Silicon N Channel Power MOSFET with Schottky Barrier Diode
File Size	184.32K / 12 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	HAT2201R-16
OCR Text	...l to ambient thermal impedance ch-a note3 50 c/w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes: 1. pw 10 ...tc = 75c 25c ?25c v ds = 10 v pulse test gate to source voltage v gs (v) drain to source volt...
Description	Silicon N Channel Power MOS FET Power Switching
File Size	216.28K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ471
OCR Text	....3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C PDM PW T D= 0.03 0.01 10 0.02 1 lse 0.0 pu ot h 1s PW T 100 1m 10 m Pulse Width PW (S) 100 m 1 10 7 2SJ471 ...
Description	Silicon P Channel DV-L MOS FET High Speed Power Switching
File Size	46.25K / 10 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SJ475-01
OCR Text	... DS ID I D(puls) V GS E AV PD T ch T stg Rating -60 25 100 20 325,9 50 150 -55 ~ +150 Unit V A A V mJ W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Ga...
Description	FAP-III Series
File Size	296.96K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	....3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 2.5 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 100 1m 10 m Pulse Width PW (S) 100 m 1 10 4 2SJ479(L...
Description	Power switching MOSFET Silicon P Channel DV-L MOS FET High Speed Power Switching Silicon P Channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	... to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.79 83.3 C/W C/W The information in this document is subject to change without notice. ...TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA -1000 -10...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

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