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For au-type Found Datasheets File :: 14578    Search Time::3.375ms    
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    HD75173 HD75173P

Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
Part No. HD75173 HD75173P
OCR Text ...forms Conforms 1.05 g *NI/Pd/AU Plating Rev.2.00, Jul.16.2004, page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesa...
Description Quadruple Differential Line Receivers With 3 State Outputs

File Size 129.84K  /  8 Page

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    S6A0072 S6A0072X

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. S6A0072 S6A0072X
OCR Text ...L pad size on X side: 94 x 87 m Au Bump Specifications Bump size on Y side: 77 x 84 m Bump size on X side: 84 x 77m Bump height: 18 1m 3...type with MPU: 4-bit bus and 8-bit bus. 4-bit bus and 8-bit bus is selected by DL bit of function se...
Description 16 COM / 40 SEG Dot Matrix LCD Controller & Driver
16COM/40SEG DOT MATRIX LCD CONTROLLER & DRIVER

File Size 267.05K  /  32 Page

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    MAX2104CCM

MAXIM[Maxim Integrated Products]
Part No. MAX2104CCM
OCR Text ...itride/ Silicon dioxide) Poly / Au None 2 microns (as drawn) 2 microns (as drawn) 5 mil. Sq. SiO2 Wafer Saw V. Quality Assurance Informat...type has been found to have all pins able to withstand a transient pulse of 1000V, per MilStd-883 Me...
Description PLASTIC ENCAPSULATED DEVICES

File Size 90.36K  /  7 Page

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    BF1005S Q62702-F1665

SIEMENS[Siemens Semiconductor Group]
Part No. BF1005S Q62702-F1665
OCR Text ...up Semiconductor Group 11 Au 1998-11-01 -25-1998 BF 1005S Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 100 13 1 max. 12 1...
Description Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system

File Size 51.73K  /  4 Page

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    BF1005 Q62702-F1498 SIEMENSAG-Q62702-F1498

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BF1005 Q62702-F1498 SIEMENSAG-Q62702-F1498
OCR Text ...up Semiconductor Group 11 Au 1998-11-01 -25-1998 BF 1005 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 100 10 1 max. 12 13...
Description Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system

File Size 50.73K  /  4 Page

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    CD4099 CD4106 CD4104 CD4107 CD4112 CD4125 CD4100 CD4131 CD4124 CD4120 CD4111 CD4116 CD4110 CD4127 CD4134 CD4135 CD4102 C

Compensated Deuices Inc...
Alpha
CDI-DIODE[Compensated Deuices Incorporated]
Part No. CD4099 CD4106 CD4104 CD4107 CD4112 CD4125 CD4100 CD4131 CD4124 CD4120 CD4111 CD4116 CD4110 CD4127 CD4134 CD4135 CD4102 CD4128 CD4119 CD4118 CD4103 CD4101 CD4130 CD4132 CD4133 CD4122 CD4129 CD4113 CD4117 CD4126 CD4121 CD4123 CD4114 CD4115 CD4105 CD4108 CD4109
OCR Text ...ack:(Cathode)...................Au AL THICKNESS............25,000 A Min GOLD THICKNESS... .....4,000 A Min CHIP THICKNESS............ ......10 Mils CIRCUIT LAYOUT DATA: For Zener operation, cathode must be operated positive with respect to ...
Description surface mount silicon Zener diodes 表面贴装硅稳压二极管
ZENER DIODE CHIPS

File Size 113.25K  /  2 Page

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    NJG1708PC1

NJRC[New Japan Radio]
Part No. NJG1708PC1
OCR Text ... : mm : Ceramic : Epoxy resin : Au 0.365 0.50 0.50 0.27 2.500.1 0.5 0.5 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in f...
Description 800MHz BAND DOWNCONVERTER GaAs MMIC

File Size 70.78K  /  5 Page

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    TA76432F TA76432FC TA76432FR TA76432FT TA76432S

TOSHIBA[Toshiba Semiconductor]
Part No. TA76432F TA76432FC TA76432FR TA76432FT TA76432S
OCR Text ... (two-digit number) * TA76432F: AU * TA76432FR: BU TA76432F/FR Lot No. (three-digit number) Lot No. The week of manufacture The year o...type) SMV TA76432FC (TE85L) (surface-mount type) TA76432F/R TA76432F/R (TE12L) TA76432S TA76432S (TP...
Description 1.26-V Adjustable High-Precision Shunt Regulators

File Size 236.01K  /  12 Page

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    BGA427 Q62702-G0067

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BGA427 Q62702-G0067
OCR Text ...Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BGA 427 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50W, Testfixture Appl..1 Insertion power ...
Description Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable)
From old datasheet system

File Size 34.05K  /  5 Page

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    CD3045B CD3030B CD3040B CD3031B CD3020B CD3021B CD3036B CD3028B CD3037B CD3016B CD3017B CD3018B CD3019B CD3022B CD3023B

Compensated Deuices Inc...
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
Air Cost Control
NXP Semiconductors N.V.
MICROSEMI CORP-LAWRENCE
Part No. CD3045B CD3030B CD3040B CD3031B CD3020B CD3021B CD3036B CD3028B CD3037B CD3016B CD3017B CD3018B CD3019B CD3022B CD3023B CD3024B CD3025B CD3026B CD3027B CD3029B CD3032B CD3033B CD3034B CD3035B CD3038B CD3039B CD3041B CD3042B CD3043B CD3044B
OCR Text ...k: (Cathode)......... ..........Au AL THICKNESS....... ....25,000 A Min GOLD THICKNESS........4,000 A Min CHIP THICKNESS............. .....10 Mils CIRCUIT LAYOUT DATA: For Zener operation, cathode must be operated positive with respect to a...
Description 1 WATT CAPABILITY WITH PROPER HEAT SINKING 1瓦的能力有适当的散
62 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

File Size 112.48K  /  2 Page

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