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  9mh Datasheet PDF File

For 9mh Found Datasheets File :: 273    Search Time::0.609ms    
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    EPCOS AG
TE Connectivity, Ltd.

Part No. EM4100A5CI2LC EM4100A5CX EM4100A5CY EM4100A6CB2RC EM4100A6CI2LB EM4100A6CI2LC EM4100A6CX EM4100A6CY EM4100B5CI2LB EM4100B5CI2LC EM4100B5CX EM4100B5CY EM4100B6CB2RC EM4100B6CI2LB EM4100B6CI2LC EM4100B6CX EM4100B6CY EM4100C4CB2RC EM4100C4CI2LB EM4100C4CI2LC EM4100C4CY EM4100A5CB2RC EM4100B5CB2RC
OCR Text ... EM4100 Coil2 L: typical 21.9mh for fo = 125kHz COIL1 COIL2 Fig. 1 COIL2 COIL1 Coil terminal / Clock input Coil terminal Fig. 2 Copyright 2002, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com EM4100 Abso...
Description Microprocessor CORE Voltage Regulator Multiphase Buck PWM Controller; Temperature Range: 0&degC to 70&deg;C; Package: 20-SOIC 模拟杂项
ZVS Full Bridge PWM Controller; Temperature Range: -40&deg;C to 85&deg;C; Package: 28-SOIC 模拟杂项
Analog Miscellaneous 模拟杂项
ZVS Full Bridge PWM Controller; Temperature Range: -40°C to 85°C; Package: 28-SOIC
Microprocessor CORE Voltage Regulator 2-4 Phase Buck PWM Controller; Temperature Range: 0°C to 70°C; Package: 20-SOIC
Microprocessor CORE Voltage Regulator Multiphase Buck PWM Controller; Temperature Range: 0°C to 70°C; Package: 20-QFN
Single 12V Input Supply Dual Regulator - Synchronous Rectified Buck PWM and Linear Power Controller; Temperature Range: -40°C to 85°C; Package: 16-QFN
ZVS Full Bridge PWM Controller; Temperature Range: -25°C to 85°C; Package: 28-SOIC
ZVS Full Bridge PWM Controller; Temperature Range: -25°C to 85°C; Package: 28-QFN T&R
AnalogMiscellaneous

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    FQP5N60C FQPF5N60C

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP5N60C FQPF5N60C
OCR Text ... junction temperature 2. L = 18.9mh, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te...
Description 600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET

File Size 836.31K  /  10 Page

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    IRF5M3710

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF5M3710
OCR Text ...= 25 V, Starting TJ = 25C, L= 0.9mh Peak IAS = 28A, VGS = 10V, RG= 25 ISD 28A, di/dt 410 A/s, Pulse width 300 s; Duty Cycle 2% VDD 100V, TJ 150C Case Outline and Dimensions -- TO-254AA 0.12 [.005] 3.78 [.149] 3.53 [.139] A 1...
Description POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.03ohm, Id=35A) 功率MOSFET N沟道(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.03ohm,身份证\u003d 35A条)

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    62CTQ030

IRF[International Rectifier]
Part No. 62CTQ030
OCR Text ... TJ = 25C, IAS = 3Amps, L = 2.9mh Current decaying linearty to zero in 1 sec Frequency limited by T J max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Max. Forward Voltage Drop (1) IRM CT LS Max. Instantaneus Rever...
Description SCHOTTKY RECTIFIER 60 Amp

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    IRFS620B

Fairchild Semiconductor
Part No. IRFS620B
OCR Text ...m junction temperature 2. L = 3.9mh, IAS = 5.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 5.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tem...
Description 200V N-Channel MOSFET

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    IRFP450

Intersil Corporation
Part No. IRFP450
OCR Text ... 50V, starting TJ = 25oC, L = 7.9mh, RG = 25, peak IAS = 14A. Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 15 0.8 0.6 0.4 0.2 0 ID , DRAIN CURRENT (A) 12 9 6 3 0 0...
Description 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET

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    IRLI540N

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRLI540N
OCR Text ... 11 ) Starting TJ = 25C, L = 1.9mh RG = 25, IAS = 18A. (See Figure 12) ISD 18A, di/dt 180A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRL540N data and test conditions IRLI540N 1000 TOP VG...
Description HEXFET Power MOSFET(HEXFET 功率MOS场效应管) HEXFET功率MOSFET(马鞍山的HEXFET功率场效应管
HEXFET? Power MOSFET

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    IRF5Y3205CM

IRF[International Rectifier]
Part No. IRF5Y3205CM
OCR Text ...= 25 V, Starting TJ = 25C, L= 3.9mh Peak IAS = 18A, VGS =10V, RG= 25 ISD 18A, di/dt 230 A/s, Pulse width 300 s; Duty Cycle 2% VDD 100V, TJ 150C Case Outline and Dimensions -- TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St.,...
Description 55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 55V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.022ohm, Id=18A*)

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    IRL540NS IRL540NL

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRL540NS IRL540NL
OCR Text ...ns Starting TJ = 25C, L = 1.9mh RG = 25, IAS = 18A. (See Figure 12) ISD 18A, di/dt 180A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to applica...
Description HEXFET Power MOSFET HEXFET功率MOSFET
HEXFET? POWER MOSFET

File Size 178.49K  /  10 Page

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For 9mh Found Datasheets File :: 273    Search Time::0.609ms    
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