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Samsung Electronic
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| Part No. |
K4S28163LD-RFR
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| OCR Text |
...DDQ and VOH min. from 1.6V to 0.9 x VDDQ.
Revision 0.6 (October 10. 2001, Preliminary)
* Changed DC current. * Changed of CL2 tSAC from 6ns to 7ns for -75 part. * Changed of CL3 tSAC from 6ns to 7ns and CL2 tSAC from 6ns to 8ns, CL1 tSA... |
| Description |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
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| File Size |
97.04K /
12 Page |
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Nanya Technology
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| Part No. |
NT56V1616A0T
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| OCR Text |
...A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 3...7ns CKE <= VIL(max), tCLK= 7ns CKE & CLK <= VIL(max), tCC=oo
(Vcc=3.3V 10% , Ta=0C to 70C) Versi... |
| Description |
1M x 16 SDRAM
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| File Size |
730.34K /
33 Page |
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it Online |
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Samsung Electronic
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| Part No. |
M366S0824DT0 M366S1623DT0
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| OCR Text |
...nts ;
Byte # 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Function Described # of bytes written into serial memory at module man...7ns 20ns 20ns 20ns 50ns A0h 60h 00h 00h 14h 10h 14h 30h A0h 60h 00h 00h 14h 14h 14h 32h 08h 20h 10h ... |
| Description |
8M x 64 SDRAM DIMM based on 4M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
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| File Size |
88.88K /
11 Page |
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Cypress
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| Part No. |
CY7C1339A CY7C1339A-100AC CY7C1339A-66AC
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| OCR Text |
...ite www.galvantech.com
Rev. 11/9 9
Pentium is a trademark of Intel Corporation. PowerPC is a trademark of IBM Corporation. Galvantech, I...7ns access/15ns cycle) Package (T = 100 PIN TQFP) Temperature (Blank = Commercial I = Industrial)
... |
| Description |
Fast access times: 4.8, 5, 6, and 7ns
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| File Size |
55.72K /
13 Page |
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Samsung Electronics
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| Part No. |
K8F5615EBM
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| OCR Text |
...urst access time (t ba, ns) 11 9 7 6 asynchronous max. access time (t aa, ns) 100 100 100 100 max. ce access time (t ce, ns) 100 100 100...7ns wi th initial access times of 100n s at 30pf. at 133mhz, the k8f5715e provides a burst access of... |
| Description |
256Mb M-die MLC NOR Specification
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| File Size |
1,124.45K /
59 Page |
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Samsung Electronic
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| Part No. |
M377S3320CT3SDRAMDIMMINTEL1.2VERB
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| OCR Text |
...16mx72 ? composition : 16mx8 *9 ? used component part # : k4s280832c-tc1h/c1l ? # of rows in module : 1 row ? # of banks in component :...7ns 60h 70h 2 25 sdram cycle time @cas latency of 1 - - 00h 00h 2 26 sdram access time @cas latency ... |
| Description |
32MBx72 SDRAM DIMM with PLL & Register based on 32MBx4, 4Banks, 4KB Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
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| File Size |
66.85K /
9 Page |
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it Online |
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