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ADPOW[Advanced Power Technology]
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| Part No. |
1011LD110
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| OCR Text |
... 1030 MHz (typical) 120.0 100.0 80.0 PL (W) 60.0 40.0 20.0 0.0 0.00 PL (W) 120.0 100.0 80.0 60.0 40.0 20.0 0.0 0.00
Load Power vs. Drive Power 1090 MHz (typical)
1.00 PD (W)
2.00
3.00
1.00 PD (W)
2.00
3.00
Drain Effi... |
| Description |
RF Power Transistors: AVIONICS
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
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| File Size |
201.62K /
4 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD2276
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| OCR Text |
...
4
50
2 (2) 0 0 20 40 60 80 100 120 140 160 (3) 0 0 2 4 6 8 10 12 0.2mA
0.1 0.1
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- I... |
| Description |
Silicon NPN triple diffusion planar type Darlington(For power amplification)
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| File Size |
55.42K /
3 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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| Part No. |
SD703
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| OCR Text |
...DICE CAPACITANCE
11
120 100 80 60 Efficiency = 60% 40 20
Ciss
Pout
10
100
Gain
9
10
Coss
Crss
1dB compression = 110W
8 0 5 10 Pin in Watts 15 20
0
1 0 5 10 15 20 25 30
VDS IN VOLTS
IV CURVE
S1A 3 DIE IV
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| Description |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
36.31K /
2 Page |
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it Online |
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Tyco Electronics
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| Part No. |
PH2729-110M07 PH2729-110M
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| OCR Text |
... 2.70
Gain (dB)
2.75
2.80 Fre q (GHz)
2.85
2.90
2.75
2.80 Fre q (GHz)
2.85
2.90
RF Test Fixture Impedance
F (...110W, 2.7-2.9 GHz, 100s Pulse, 10% Duty
Test Fixture Circuit Dimensions
M/A-COM Products Release... |
| Description |
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100渭s Pulse, 10% Duty
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100レs Pulse, 10% Duty
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| File Size |
129.35K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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