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    M32000D4BFP-80

Mitsubishi Electric Semiconductor
Part No. M32000D4BFP-80
OCR Text 80 SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER DESCRIPTION The M32000D4BFP-80 is a new generation microcomputer with a 32-bit CPU and built-i...20 MHz. A 16-bit data and 24-bit address bus are the M32000D4BFP-80's external bus and the interface...
Description SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER

File Size 438.60K  /  44 Page

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    RJH1DF7RDPQ-80

Renesas Electronics Corporation
Part No. RJH1DF7RDPQ-80
OCR Text 80 silicon n channel igbt high speed power switching features ? voltage resonance circuit use ? reverse conducting igbt with monoli...20 0 collector to emitter saturation voltage vs. junction temparature (typical) collector to emitter...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 94.94K  /  7 Page

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    RJH1CF7RDPQ-80 RJH1CF7RDPQ-80-15

Renesas Electronics Corporation
Part No. RJH1CF7RDPQ-80 RJH1CF7RDPQ-80-15
OCR Text 80 silicon n channel igbt high speed power switching features ? voltage resonance circuit use ? reverse conducting igbt with monoli...20 0 collector to emitter saturation voltage vs. junction temparature (typical) collector to emitt...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 94.11K  /  7 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPD14N06S2-80
OCR Text 80 OptiMOS(R) Power-Transistor Feature * N-Channel Product Summary VDS R DS(on) ID 55 80 17 P- TO252 -3-11 V m A * Enhancement m...20 30 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=14A, V DD=25V, RGS=2...
Description Low Voltage MOSFETs - DPAK; 14 A; 55V; NL; 80mOhm
OptiMOS Power-Transistor

File Size 258.80K  /  8 Page

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Part No. FN3275H-80-35 FN3275H-150-99 FN3275H-250-99
OCR Text ... 13.5 -34 1.3 - fn 3275h-80-35 80 (88) 45 29.4 13.5 -35 2.2 - fn 3275h-100-35 100 (110) 55 29.4 17.1 -35 2.6 - fn...20.6 -99 6.1 1151-047 fn 3275h-320-99 320 (350) 160 59.5 12.2 -99 7.2 1151-047 fn 32...
Description 520 V, 60 HZ, THREE PHASE EMI FILTER

File Size 497.90K  /  3 Page

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    RJH1CF6RDPQ-80 RJH1CF6RDPQ-80-15

Renesas Electronics Corporation
Part No. RJH1CF6RDPQ-80 RJH1CF6RDPQ-80-15
OCR Text 80 silicon n channel igbt high speed power switching features ? voltage resonance circuit use ? reverse conducting igbt with monoli...20 a collector dissipation p c 227.2 w junction to case thermal impedance j-c 0.55 c/w junct...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 93.81K  /  7 Page

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    RJH1CF5RDPQ-80 RJH1CF5RDPQ-80-15

Renesas Electronics Corporation
Part No. RJH1CF5RDPQ-80 RJH1CF5RDPQ-80-15
OCR Text 80 silicon n channel igbt high speed power switching features ? voltage resonance circuit use ? reverse conducting igbt with monoli...20 60 40 80 collector to emitter saturation voltage vs. junction temparature (typical) collector t...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 93.79K  /  7 Page

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    RJH1CF4RDPQ-80 RJH1CF4RDPQ-80-15

Renesas Electronics Corporation
Part No. RJH1CF4RDPQ-80 RJH1CF4RDPQ-80-15
OCR Text 80 silicon n channel igbt high speed power switching features ? voltage resonance circuit use ? reverse conducting igbt with monoli...20 a, v ge = 15v, tj = 25c) ? gate to emitter voltage rating 30 v ? pb-free lead plating ...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 93.64K  /  7 Page

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    RJH1BF7RDPQ-80 RJH1BF7RDPQ-80-15

Renesas Electronics Corporation
Part No. RJH1BF7RDPQ-80 RJH1BF7RDPQ-80-15
OCR Text 80 silicon n channel igbt high speed power switching features ? voltage resonance circuit use ? reverse conducting igbt with monoli...20 10 0 12 4 268 10 typical transfer characteristics typical output characteristics 100 80 60 40 20 ...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 95.55K  /  7 Page

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